公开(公告)号：US3666665A

公开(公告)日：1972-05-30

申请号：US3666665D

申请日：1970-12-14

Applicant: IBM

Inventor： CHAPMAN DANIEL W ,  MICHAELSEN JOHN D ,  STRYKER FREDERICK J

IPC: C04B35/01 ,  C04B35/497 ,  C04B35/48 ,  C04B35/50 ,  G11B9/02

CPC classification number: C04B35/497 ,  C04B35/01

Abstract: Ferroelectric solid solutions simultaneously containing lead, iron, niobium, bismuth, zirconium, lanthanum, and oxygen are synthesized and sintered at temperatures lower than 1,000* C. Polycrystalline layers and films of such compositions are prepared by radio-frequency sputtering, electron beam evaporation, chemical spray deposition, or centrifuge deposition. Layers of such compositions only a few microns or fractions of a micron thick when on a conductive substrate are used as nonlinear elements in logic and memory devices.

Abstract translation: 在低于1000℃的温度下合成并烧结同时含有铅，铁，铌，铋，锆，镧和氧的铁电固体溶液。通过射频溅射，电子束蒸发， 化学喷雾沉积或离心沉积。 在导电基板上的这种组合物的层仅用于几微米或几微米厚，作为逻辑和存储器件中的非线性元件。

公开(公告)号：US3681766A

公开(公告)日：1972-08-01

申请号：US3681766D

申请日：1971-03-01

Applicant: IBM

Inventor： CHAPMAN DANIEL W ,  MEHTA RAJENDRA R

IPC: G11C13/04 ,  G11C7/00 ,  G11C11/22 ,  G11C11/42

CPC classification number: G11C13/047

Abstract: A memory element for use in photoelectric data recording apparatus comprising a layered structure of a conductive substrate, ferroelectric material, discontinuous interface layer, photoconductor, and top conductive electrode. The top conductive electrode an discontinuous interface layer are chosen in conjunction with the photoconductor to act as blocking contacts in the dark and injecting contacts in the light. It is also desirable, although not essential, that the discontinuous interface layer make a blocking contact with the ferroelectric.

Abstract translation: 一种用于光电数据记录装置的存储元件，包括导电衬底，铁电材料，不连续界面层，光电导体和顶部导电电极的分层结构。 选择不连续界面层的顶部导电电极与光电导体一起作为黑暗中的阻挡触点并在光中注入触点。 不期望的是，不连续的界面层与铁电体形成阻挡接触。

公开(公告)号：US3681765A

公开(公告)日：1972-08-01

申请号：US3681765D

申请日：1971-03-01

Applicant: IBM

Inventor： CHAPMAN DANIEL W

IPC: G11C13/04 ,  G11C7/00 ,  G11C11/22 ,  G11C11/42

CPC classification number: G11C13/047

Abstract: A memory element for use in photoelectric data recording apparatus of the type described in U.S. Pat. No. 3,148,354, comprising a sandwich-like structure of a top conductive electrode in electrical contact with a photoconductive material in electrical contact with a discontinuous interface layer in electrical contact with a ferroelectric material, in electrical contact with a conductive electrode substrate. The top conductive electrode and discontinuous interface layer are chosen to be blocking contact with the photoconductor in the dark, and injecting in the light. Further, one of the electrodes comprises a plurality of individual electrodes of stripe configuration while the other electrode comprises a bus bar portion and at least one reference or ''''ground'''' portion. The bus bar portion is in light controlled electrical contact with at least one localized part of the stripe configured electrodes via the photoconductor material. Where the top electrode comprises the bus bar and reference or ground portion and the discontinuous interface layer is a series of electrically conductive islands and the bottom electrode is in a striped electrode configuration, then by proper arrangement of islands and stripes, a focusing effect is achieved to allow switching of the ferroelectric material with a lower current density in the photoconductor.

Abstract translation: 一种用于在美国专利No. 包括与导电材料电接触的顶部导电电极的夹层结构，其与与导电电极基板电接触的与铁电体材料电接触的不连续界面层电接触。 选择顶部导电电极和不连续界面层在暗处与光电导体阻挡接触，并在光中注入。 此外，一个电极包括多个条形结构的独立电极，而另一个电极包括汇流条部分和至少一个基准或“接地”部分。 汇流条部分经由光电导体材料与条状配置的电极的至少一个局部部分进行光控制的电接触。 在顶电极包括汇流条和参考或接地部分，不连续界面层是一系列导电岛状物并且底部电极处于条状电极结构中，则通过适当地布置岛状物和条纹，实现聚焦效果 以允许在感光体中以较低的电流密度切换铁电材料。

公开(公告)号：DE3777072D1

公开(公告)日：1992-04-09

申请号：DE3777072

申请日：1987-10-06

Applicant: IBM

Inventor： AINSLIE NORMAN G ,  BRUSIC VLASTA A ,  CHAPMAN DANIEL W ,  ROMANKIW LUBOMYR T ,  WILMER RICHARD K

IPC: G11B5/60 ,  G11B5/31 ,  G11B5/48 ,  G11B5/17

Abstract: A thin film magnetic read/write head/arm assembly and method of manufacturing the same is disclosed herein. Contact soldering (37) of the opposite to disk side of the read/write head (35) to a cable (33) in laminate relationship to the suspension arm (31), or a polyimide strip with conductors deposited thereon provides both electrical interconnection and mechanical support. Semiconductor devices (40) can also be intermediately soldered between the head and cable for maximum noise suppression.