公开(公告)号：US3666665A

公开(公告)日：1972-05-30

申请号：US3666665D

申请日：1970-12-14

Applicant: IBM

Inventor： CHAPMAN DANIEL W ,  MICHAELSEN JOHN D ,  STRYKER FREDERICK J

IPC: C04B35/01 ,  C04B35/497 ,  C04B35/48 ,  C04B35/50 ,  G11B9/02

CPC classification number: C04B35/497 ,  C04B35/01

Abstract: Ferroelectric solid solutions simultaneously containing lead, iron, niobium, bismuth, zirconium, lanthanum, and oxygen are synthesized and sintered at temperatures lower than 1,000* C. Polycrystalline layers and films of such compositions are prepared by radio-frequency sputtering, electron beam evaporation, chemical spray deposition, or centrifuge deposition. Layers of such compositions only a few microns or fractions of a micron thick when on a conductive substrate are used as nonlinear elements in logic and memory devices.

Abstract translation: 在低于1000℃的温度下合成并烧结同时含有铅，铁，铌，铋，锆，镧和氧的铁电固体溶液。通过射频溅射，电子束蒸发， 化学喷雾沉积或离心沉积。 在导电基板上的这种组合物的层仅用于几微米或几微米厚，作为逻辑和存储器件中的非线性元件。