公开(公告)号：JP2000357777A

公开(公告)日：2000-12-26

申请号：JP2000149201

申请日：2000-05-22

Applicant: IBM

Inventor： CHARLES THOMAS BLACK ,  CYRIL KYABURA JR ,  GRILL ALFRED ,  DEBORA AN NEWMEYER ,  PRICER WILBUR DAVID ,  CATHERINE LYNN SEENGAA ,  THOMAS MAKKAROORU SHAW

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a ferroelectric/CMOS integrated structure having high storage characteristics. SOLUTION: The structure comprises at least a ferroelectric material 22, a pair of electrodes 20, 24 (not decomposing when depositing or annealing) contacting opposite surfaces of the ferroelectric material 20, and an oxygen source layer 26 (made of a metal oxide at least partly decomposing in deposition and/or post-treatment) contacting at least one of electrodes 22, 24.

公开(公告)号：JPH11135737A

公开(公告)日：1999-05-21

申请号：JP23192798

申请日：1998-08-18

Applicant: IBM

Inventor： CHARLES THOMAS BLACK ,  JEFFREY JOHN WELSER

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a new kind of signal transistor and memory device storing information through the use of polarization of ferroelectrics. SOLUTION: This device is provided with a ferroelectric which is a floating gate FET and arranged between a gate 5 and a floating gate 7, and with the satisfactorily formed resistor of a thin SiO2 insulator 8 between the floating gate and a transistor channel 3c. In like the conventional structure, this device connects a floating gate to a transistor channel capacitively and resistively to enable rad/write of the device by using low voltage. The reason that this device gives rather advantages concerning operation at a low voltage and high speed with respect to more than 10 times of repeating cycles is due to the device durability being restricted by resistance to ferroelectrics rather than oxide breakage. In addition, the device gives considerable advantages for integrating at giga bit density.