公开(公告)号：JP2000357777A

公开(公告)日：2000-12-26

申请号：JP2000149201

申请日：2000-05-22

Applicant: IBM

Inventor： CHARLES THOMAS BLACK ,  CYRIL KYABURA JR ,  GRILL ALFRED ,  DEBORA AN NEWMEYER ,  PRICER WILBUR DAVID ,  CATHERINE LYNN SEENGAA ,  THOMAS MAKKAROORU SHAW

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a ferroelectric/CMOS integrated structure having high storage characteristics. SOLUTION: The structure comprises at least a ferroelectric material 22, a pair of electrodes 20, 24 (not decomposing when depositing or annealing) contacting opposite surfaces of the ferroelectric material 20, and an oxygen source layer 26 (made of a metal oxide at least partly decomposing in deposition and/or post-treatment) contacting at least one of electrodes 22, 24.