公开(公告)号：DE3773663D1

公开(公告)日：1991-11-14

申请号：DE3773663

申请日：1987-12-18

Applicant: IBM

Inventor： CHAUNG CHING-TE KENT ,  HACKBARTH EDWARD ,  TANG DENNY DUAN-LEE

IPC: G11C11/41 ,  G11C11/411 ,  H01L21/8229 ,  H01L27/06 ,  H01L27/10 ,  H01L27/102

Abstract: This invention relates generally to Static Random Access Memories (SRAM) and more particularly, relates to a SRAM cell (1) wherein soft-error due to alpha -particle radiation is reduced by permitting the potential at the common-emitter node (11; 12) of the cross-coupled transistors (5; 6) of the memory cell to swing freely. Still more particularly, it relates to a SRAM cell wherein the common-emitter node of the cell is decoupled from a heavily capacitively loaded word line (3) with its common constant current source (21) by means of a constant current source (22) or current mirror disposed in each cell between the common-emitter node and the word line