公开(公告)号：CA1111536A

公开(公告)日：1981-10-27

申请号：CA314676

申请日：1978-10-30

Applicant: IBM

Inventor： CHEVALLIER JACQUES P ,  GUARNIERI CHARLES R ,  ONTON AARE ,  WIEDER HAROLD

IPC: G03G5/08 ,  H01L31/0248 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/20 ,  H01S5/00 ,  H01C3/00

Abstract: IMPROVED PHOTOCONDUCTOR FOR GaAs LASER ADDRESSED DEVICES An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous SixGe1-xHy where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.