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    Tailored anisotropy magnetic bubble domain material
    2.
    发明授权
    Tailored anisotropy magnetic bubble domain material 失效
    量身定制的各向异性磁泡区域材料

    公开(公告)号：US3930241A

    公开(公告)日：1975-12-30

    申请号：US51832974

    申请日：1974-10-29

    Applicant: IBM

    Inventor： GUARNIERI C RICHARD ,  LEE KENNETH ,  ONTON AARE

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F41/14

    CPC classification number: G11C19/08 ,  H01F10/00 ,  H01F10/16

    Abstract: A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5* from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.

    Abstract translation: 描述能够支撑含有其中具有磁性单轴各向异性倾斜方向的区域的气泡域的磁性无定形材料的膜。 一个例子是具有气泡区域的磁性非晶膜，其中磁性单轴各向异性以垂直于膜平面的线倾斜5度。 另一个例子是含有一个方向的磁性单轴各向异性的一层的磁性无定形材料的膜，另一方向具有磁性单轴各向异性的第二层。

    4.
    发明专利
    未知

    公开(公告)号：DE2412265A1

    公开(公告)日：1974-09-26

    申请号：DE2412265

    申请日：1974-03-14

    Applicant: IBM

    Inventor： FERN ROBERT EDWARD ,  ONTON AARE

    IPC: G01J3/12 ,  G01J3/433 ,  G01J3/443 ,  G01N21/52 ,  G01J3/28

    Abstract: A method and apparatus for determining the characteristics of a luminescent material using a monochromator to detect the intensity of a light emitted by the material at a single major spectral line as the material is scanned. The wavelength of a monochromator is adjusted such that the intensity being measured is the peak intensity. The fact that the intensity is the peak intensity is determined by taking the derivative of the intensity with respect to wavelength as the wavelength of the monochromator is modulated by a wavelength wobbler. The intensity is at its peak when the derivative equals zero. The derivative signal is applied to a servo loop which controls the wavelength of the monochromator and varies the wavelength such that the derivative is maintained equal to zero. This technique may be used to determine the atomic proportions of material having intensity and/or wavelength related to its composition, to define areas of a material having particular characteristics, to evaluate a piece of material, or to determine the line shape of the spectral curve at a point on the material.

    OPTICAL RECORDING MEDIUM
    7.
    发明专利
    OPTICAL RECORDING MEDIUM 未知

    公开(公告)号：CA1250176A

    公开(公告)日：1989-02-21

    申请号：CA426780

    申请日：1983-04-27

    Applicant: IBM

    Inventor： LEE MICHAEL H ,  ONTON AARE ,  WIEDER HAROLD

    IPC: B41M5/26 ,  G01D15/34 ,  G11B7/243 ,  G11B7/24

    Abstract: OPTICAL RECORDING MEDIUM An optical recording medium comprising adjacent thin layers of two different materials, which, upon marking with an energy beam, form a marked area comprising an alloy or mixture of the two materials. The optical properties of the marked area has contrast sufficiently different from the optical properties of the unmarked area so that the marked area can be reliably sensed. One of the first of the thin layers comprises a metal and the other of the thin layers comprises a metal or a semiconductor. The metals are taken from the group comprising Al, Au, Pb and Sn and the semiconductors are chosen from the group comprising Ge and Si.

    ELECTROLUMINESCENT DEVICE
    8.
    发明专利
    ELECTROLUMINESCENT DEVICE 未知

    公开(公告)号：AU527313B2

    公开(公告)日：1983-02-24

    申请号：AU5459480

    申请日：1980-01-14

    Applicant: IBM

    Inventor： MARRELLO VINCENT ,  ONTON AARE ,  RUHLE WOLFGANG

    IPC: G09G3/12 ,  G09G3/30 ,  H05B33/00

    Abstract: A method of operating an alternating current (AC) excited thin film electroluminensence (ACTEL) device which improves the memory effect and brightness thereof is described. A typical ACTEL device has a thin luminescent layer made of ZnS thin film doped with Mn which is sandwiched between two dielectric layers. ACTEL devices exhibit a brightness versus voltage amplitude hysteresis loop which is commonly referred to as the memory effect. The application of a hybrid AC excitation waveform to the ACTEL device such as that shown in the Figure provides increased brightness and improved memory effect stability. The hybrid waveform has an initial portion 12A that is sufficiently high for efficient carrier generation and a remaining waveform portion 14A that is at a lower level than the initial portion for charge collection and holding purposes.

    ELECTROLUMINESCENT DEVICE
    9.
    发明专利
    ELECTROLUMINESCENT DEVICE 未知

    公开(公告)号：AU5459480A

    公开(公告)日：1980-09-11

    申请号：AU5459480

    申请日：1980-01-14

    Applicant: IBM

    Inventor： MARRELLO VINCENT ,  ONTON AARE ,  RUHLE WOLFGANG

    IPC: G09G3/12 ,  G09G3/30 ,  H05B33/10

    Abstract: A method of operating an alternating current (AC) excited thin film electroluminensence (ACTEL) device which improves the memory effect and brightness thereof is described. A typical ACTEL device has a thin luminescent layer made of ZnS thin film doped with Mn which is sandwiched between two dielectric layers. ACTEL devices exhibit a brightness versus voltage amplitude hysteresis loop which is commonly referred to as the memory effect. The application of a hybrid AC excitation waveform to the ACTEL device such as that shown in the Figure provides increased brightness and improved memory effect stability. The hybrid waveform has an initial portion 12A that is sufficiently high for efficient carrier generation and a remaining waveform portion 14A that is at a lower level than the initial portion for charge collection and holding purposes.

    10.
    发明专利
    未知

    公开(公告)号：DE1809303A1

    公开(公告)日：1969-08-14

    申请号：DE1809303

    申请日：1968-11-16

    Applicant: IBM

    Inventor： RUDOLPH LORENZ MAX ,  ONTON AARE

    IPC: E03F5/04 ,  H01L21/00 ,  H01L21/22 ,  H01L33/00 ,  H01L7/34

    Abstract: 1,173,850. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 20 Nov., 1968 [1 Dec., 1967], No. 54989/68. Heading H1K. In a method of manufacturing a radiationemitting device, having a semi-conductor region wherein recombination radiation is generated in a first frequency band associated with a paired state of acceptor and donor impurities in the semi-conductor region and in a second frequency band associated with a dissociated state of acceptor and donor impurities in the semiconductor region, the device is heat treated within such a temperature range and for such a time that the proportion of impurities in the state which gives rise to a higher efficiency in the required radiation band is increased. In particular in a gallium phosphide semi-conductor region doped with zinc and oxygen to form a PN diode the efficiency of the visible radiation emission can be increased by heat treatment in the range between 450‹ C. and 700‹ C. for from 4 minutes to 3 hours. The temperature during the heat treatment need not be constant, but the treatment may proceed in stages at fixed temperature values within the specified range. Other impurities used to dope the semi-conductor are zinc and sulphur, cadmium and oxygen, and carbon and oxygen, the acceptor impurity being present in a higher concentration than the donor impurity.

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