公开(公告)号：US3679501A

公开(公告)日：1972-07-25

申请号：US3679501D

申请日：1970-04-13

Applicant: IBM

Inventor： CHICOTKA RICHARD J

IPC: H01L21/306 ,  C09G1/00 ,  H01L7/00

CPC classification number: H01L21/02019 ,  H01L21/30612

Abstract: A METHOD OF POLISHING GALLIUM PHOSPHIDE USED IN THE MANUFACTURE OF SEMICONDUCTIVE DEVICES. A GALLIUM PHOSPHIDE WAFER IS IMMERSED IN A SOLUTION CONSISTING OF FROM ABOUT 15 TO 20 PARTS BY VOLUME OF CONCENTRATED HYDROFLUORIC ACID AND FROM ABOUT 3 TO ABOUT 0.5 PARTS OF CONCENTRATED NITRIC ACID. TREATMENT BY THE HF-HNO3 SOLUTION OF THIS INVENTION LEAVES THE WAFER SUBSTANTIALLY PIT FREE WITH A MIRROR-LIKE SURFACE.

公开(公告)号：US3628998A

公开(公告)日：1971-12-21

申请号：US3628998D

申请日：1969-09-23

Applicant: IBM

Inventor： BLUM SAMUEL E ,  CHICOTKA RICHARD J

IPC: C30B11/00 ,  C30B11/06 ,  C30B29/40 ,  H01L21/208

CPC classification number: C30B11/06 ,  Y10S117/90

Abstract: A mixed crystal e.g., GaxIn1 xP, of controlled composition in the growth direction, either of substantially homogeneous composition or of variable composition, is prepared from the melt or liquid solution by the method of this disclosure. Illustratively, the starting materials are two different pure III-V compounds with different melting points, e.g., GaP and InP, which are to be the components from which the mixed crystal is to be grown. A three-layered composite or charge is fabricated consisting of a layer of the lower melting compound flanked on both top and bottom by layers of the higher melting compound. The composite is established in a crucible which is sealed in a quartz ampul in vacuum to form an assembly. When an overpressure of either an inert or a reactive gas is required, the quartz ampul is sealed inside a stronger container, e.g., of graphite. The assembly is allowed to equilibrate isothermally in a furnace of a given temperature to yield a liquid solution from which the desired solid solution of mixed crystal can crystallize. For crystal growth with homogeneous composition the assembly is lowered slowly into a slightly cooler temperature zone of the furnace and crystallization of the mixed crystal occurs at the lower one of the two liquid-solid interfaces. A single crystal is obtained by epitaxial growth when the substrate is a singlecrystal seed. As the liquid becomes depleted in the higher melting component at the growth interface, the dissolution of the higher melting component at the upper liquid-solid interface replenishes the composition of the liquid. This physical process is incrementally small, i.e., it occurs slowly, and results in the composition of the liquid remaining essentially in a steady state of constant composition. Illustratively, GaxIn1 xP cylindrical ingots of approximately 1 cm. length X 1.5 cm. diameter are readily produced from the components of GaP and InP by the practice of this disclosure.

公开(公告)号：US3615205A

公开(公告)日：1971-10-26

申请号：US3615205D

申请日：1968-10-14

Applicant: IBM

Inventor： BLUM SAMUEL E ,  CHICOTKA RICHARD J

IPC: C30B11/00 ,  C30B11/06 ,  C01B25/08 ,  B01J17/00

CPC classification number: C30B11/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/44

Abstract: Ingots of high purity III-V semiconductor compositions are prepared by encapsulating the molten Group III element with a barrier material that is permeable to the vapors of the Group V element while being impermeable to contaminants inherent in the system such as silicon and the like. The synthesis of the composition may be carried out in a conventional vertical sealed quartz enclosure. A crucible containing the Group III element and a barrier material and the Group V element are disposed within the sealed enclosure. The barrier material acts as a permeable membrane for vapors of the Group V element and as an impermeable membrane, or getter, for contaminants inherent in the system. Thus, vapors of the Group V element is permitted to diffuse through the barrier layer to react with the molten Group III element to form the III-V composition to the exclusion of contaminants. Ingots of highly pure III-V compositions are prepared in this manner.