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    Method for the synthesis and growth of high purity iii{14 v semiconductor compositions in bulk
    1.
    发明授权
    Method for the synthesis and growth of high purity iii{14 v semiconductor compositions in bulk 失效
    高浓度III {14 V半导体组合物在大容量中的合成和生长的方法

    公开(公告)号：US3615205A

    公开(公告)日：1971-10-26

    申请号：US3615205D

    申请日：1968-10-14

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  CHICOTKA RICHARD J

    IPC: C30B11/00 ,  C30B11/06 ,  C01B25/08 ,  B01J17/00

    CPC classification number: C30B11/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/44

    Abstract: Ingots of high purity III-V semiconductor compositions are prepared by encapsulating the molten Group III element with a barrier material that is permeable to the vapors of the Group V element while being impermeable to contaminants inherent in the system such as silicon and the like. The synthesis of the composition may be carried out in a conventional vertical sealed quartz enclosure. A crucible containing the Group III element and a barrier material and the Group V element are disposed within the sealed enclosure. The barrier material acts as a permeable membrane for vapors of the Group V element and as an impermeable membrane, or getter, for contaminants inherent in the system. Thus, vapors of the Group V element is permitted to diffuse through the barrier layer to react with the molten Group III element to form the III-V composition to the exclusion of contaminants. Ingots of highly pure III-V compositions are prepared in this manner.

    Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
    2.
    发明授权
    Group iii{14 v semiconductor twinned crystals and their preparation by solution growth 失效
    第III组{14 V半导体二次晶体及其解决方案增长的准备

    公开(公告)号：US3642443A

    公开(公告)日：1972-02-15

    申请号：US3642443D

    申请日：1968-08-19

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  PLASKETT THOMAS S

    IPC: C30B13/02 ,  C30B13/34 ,  C01B25/08 ,  B01D9/00 ,  B01J17/02

    CPC classification number: C30B13/02 ,  C30B13/34 ,  Y10S117/902 ,  Y10S148/107 ,  Y10S148/115 ,  Y10S148/119

    Abstract: The disclosure presents a method of growing large crystals of GaP from solution in which a zone of liquid gallium saturated with GaP is passed upward through a GaP feed ingot. In order to grow large crystals, it was found necessary to initiate growth onto a twinned seed crystal in which all of the twin planes are parallel to each other and parallel to a growth direction. Wafers cut parallel to the twin planes exhibit a (111) surface which are suitable for electroluminescent devices.

    Abstract translation: 本公开提出了一种从GaP的饱和的液态镓区向上通过GaP进料锭的溶液中生长GaP的大晶体的方法。 为了生长大晶体，发现有必要在其中所有双平面彼此平行并且平行于生长方向的双晶晶中引发生长。 平行于双平面切割的晶片表现出适合于电致发光器件的（111）表面。

    Method for growth of a mixed crystal with controlled composition
    3.
    发明授权
    Method for growth of a mixed crystal with controlled composition 失效
    具有受控组合的混合晶体生长方法

    公开(公告)号：US3628998A

    公开(公告)日：1971-12-21

    申请号：US3628998D

    申请日：1969-09-23

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  CHICOTKA RICHARD J

    IPC: C30B11/00 ,  C30B11/06 ,  C30B29/40 ,  H01L21/208

    CPC classification number: C30B11/06 ,  Y10S117/90

    Abstract: A mixed crystal e.g., GaxIn1 xP, of controlled composition in the growth direction, either of substantially homogeneous composition or of variable composition, is prepared from the melt or liquid solution by the method of this disclosure. Illustratively, the starting materials are two different pure III-V compounds with different melting points, e.g., GaP and InP, which are to be the components from which the mixed crystal is to be grown. A three-layered composite or charge is fabricated consisting of a layer of the lower melting compound flanked on both top and bottom by layers of the higher melting compound. The composite is established in a crucible which is sealed in a quartz ampul in vacuum to form an assembly. When an overpressure of either an inert or a reactive gas is required, the quartz ampul is sealed inside a stronger container, e.g., of graphite. The assembly is allowed to equilibrate isothermally in a furnace of a given temperature to yield a liquid solution from which the desired solid solution of mixed crystal can crystallize. For crystal growth with homogeneous composition the assembly is lowered slowly into a slightly cooler temperature zone of the furnace and crystallization of the mixed crystal occurs at the lower one of the two liquid-solid interfaces. A single crystal is obtained by epitaxial growth when the substrate is a singlecrystal seed. As the liquid becomes depleted in the higher melting component at the growth interface, the dissolution of the higher melting component at the upper liquid-solid interface replenishes the composition of the liquid. This physical process is incrementally small, i.e., it occurs slowly, and results in the composition of the liquid remaining essentially in a steady state of constant composition. Illustratively, GaxIn1 xP cylindrical ingots of approximately 1 cm. length X 1.5 cm. diameter are readily produced from the components of GaP and InP by the practice of this disclosure.

    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
    4.
    发明授权
    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth 失效
    通过外源溶液生长制备绿色发光磷灰石二极体的方法

    公开(公告)号：US3585087A

    公开(公告)日：1971-06-15

    申请号：US3585087D

    申请日：1967-11-22

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  SHIH KWANG K ,  WOODALL JERRY M

    IPC: C30B15/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/46 ,  H01L7/00 ,  H01L7/38

    CPC classification number: C30B15/007 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/134 ,  Y10S438/919

    Abstract: GREEN-EMITTING ELECTROLUMINESCENT GALLIUM PHOSPHIDE DIODES ARE GROWN BY LIQUID PHASE EPITAXY. A GA-GAP MELT CONTAINED IN A COVERED CRUICIBLE IS PLACED IN A VERTICAL FURNACE. A GAP SUBSTRATE WAFER IS INSERTED INTO THE MELT WHICH HAS BEEN MAINTAINED AT A TEMPERATURE OF ABOUT 1110-1140*C. AN N-TYPE GAP LAYER IS PRODUCED BY THE ADDITION OF A DOPANT SELECTED FROM S, SE, AND TE TO THE MELT WHICH IS SLOWLY COOLED TO A TEMPERATURE OF ABOUT 1070-1100*C., AT WHICH TIME THE MELT IS COUNTERDOPED WITH AN ACCEPTOR DOPANT, E.G., ZN OR CD. THE MELT IS FURTHER COOLED TO ABOUT 1030-1060*C., CAUSING THE GROWTH OF A P-TYPE LAYER, AFTER WHICH THE SUBSTRATE IS REMOVED FROM THE METAL AND FURTHER COOLED TO AMBIENT TEMPERATURES. ELECTROLUMINESCENT DIODES ARE THEN PREPARED BY THINNING THE SUBSTRATE SIDE OF THE WAFER TO REDUCE SERIES RESISTANCE. AU-ZN AND AU-SN ALLOY DOTS ARE APPLIED TO THE P AND N SIDE RESPECTIVELY, OF SAWED OR CLEAVED SECTIONS OF THE WAFER. GREEN-EMITTING DIODES PREPARED BY THE ABOVE METHOD HAVE EFFICIENCIES OF ABOUT 2.7X10-4, WHICH EFFICIENCIES CAN BE IMPROVED BY A FACTOR OF 2 OR MORE BY COATING THE DIODES WITH ANTI-REFLECTIVE EPOXY COATINGS. THE DIODES FIND UTILITY AS PANEL INDICATORS.

    FAR ULTRAVIOLET SURGICAL AND DENTAL PROCEDURES
    7.
    发明专利
    FAR ULTRAVIOLET SURGICAL AND DENTAL PROCEDURES 未知

    公开(公告)号：CA1238690A

    公开(公告)日：1988-06-28

    申请号：CA440660

    申请日：1983-11-08

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  SRINIVASAN RANGASWAMY ,  WYNNE JAMES J

    IPC: A61B17/00 ,  A61B18/20 ,  A61B18/26 ,  A61C1/00 ,  A61C17/00 ,  A61F9/008 ,  A61N5/06 ,  A61B17/36

    Abstract: YO982-087 FAR ULTRAVIOLET SURGICAL AND DENTAL PROCEDURES A method and apparatus are described for photoetching organic biological matter without requiring heat as the dominant etching mechanism. Farultraviolet radiation of wavelengths less than 200 nm are used to selectively remove organic biological material, where the radiation has an energy fluence sufficiently great to cause ablative photodecomposition. Either continuous wave or pulse radiation can be used, a suitable ultraviolet light source being an ArF excimer laser having an output at 193 nm. The exposed biological material is ablatively photodecomposed without heating or damage to the rest of the organic material. Medical and dental applications include the removal of damaged or unhealthy tissue from bone, removal of skin lesions, cutting or sectioning healthy tissue, and the treatment of decayed teeth.

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