公开(公告)号：DE3684986D1

公开(公告)日：1992-05-27

申请号：DE3684986

申请日：1986-10-17

Applicant: IBM

Inventor： CHOI KWANGWOO ,  ROBERTS STANLEY

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/52 ,  H01L27/088 ,  H01L29/78 ,  H01L21/31

Abstract: A process is disclosed for forming a patterned silicide layer overlying a processed semiconductor substrate (10), the substrate having insulator regions (40, 50) and insulator-free regions (20, 30, 70) on an exposed surface thereof. The process comprises the following steps: co-depositing silicon and a refractory metal such as titanium, Zirconium, tungsten, molybdenum, cobalt, vanadium, or nickel,on the exposed surface of the substrate to form a metal rich silicide (80) thereon; annealing the metal rich silicide such that it reacts with the underlying insulator-free regions to form a reacted silicide (90, 100, 110) without reacting with the underlying insulator regions; and exposing the substrate to a wet etchant which removes the unreacted portions of the metal rich silicide without removing the reacted silicide. Depending on the refractory metal used, the etchant is either a concentrated basic peroxide etchant comprising ammonium hydroxide, or a concentrated acid peroxide etchant comprising hydrochloric acid or sulfuric acid.