公开(公告)号：DE68924468D1

公开(公告)日：1995-11-09

申请号：DE68924468

申请日：1989-11-08

Applicant: IBM

Inventor： ROBERTS STANLEY ,  KAANTA CARTER WELLING

IPC: H01L21/768 ,  H01L23/522

Abstract: An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.

公开(公告)号：DE3684986D1

公开(公告)日：1992-05-27

申请号：DE3684986

申请日：1986-10-17

Applicant: IBM

Inventor： CHOI KWANGWOO ,  ROBERTS STANLEY

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/52 ,  H01L27/088 ,  H01L29/78 ,  H01L21/31

Abstract: A process is disclosed for forming a patterned silicide layer overlying a processed semiconductor substrate (10), the substrate having insulator regions (40, 50) and insulator-free regions (20, 30, 70) on an exposed surface thereof. The process comprises the following steps: co-depositing silicon and a refractory metal such as titanium, Zirconium, tungsten, molybdenum, cobalt, vanadium, or nickel,on the exposed surface of the substrate to form a metal rich silicide (80) thereon; annealing the metal rich silicide such that it reacts with the underlying insulator-free regions to form a reacted silicide (90, 100, 110) without reacting with the underlying insulator regions; and exposing the substrate to a wet etchant which removes the unreacted portions of the metal rich silicide without removing the reacted silicide. Depending on the refractory metal used, the etchant is either a concentrated basic peroxide etchant comprising ammonium hydroxide, or a concentrated acid peroxide etchant comprising hydrochloric acid or sulfuric acid.

公开(公告)号：DE3475849D1

公开(公告)日：1989-02-02

申请号：DE3475849

申请日：1984-08-08

Applicant: IBM

Inventor： ROBERTS STANLEY ,  RYAN JAMES GARDNER

IPC: H01L27/04 ,  H01G4/10 ,  H01G4/20 ,  H01L21/318 ,  H01L21/822 ,  H01G4/08 ,  H01L21/31

公开(公告)号：DE3482679D1

公开(公告)日：1990-08-16

申请号：DE3482679

申请日：1984-08-23

Applicant: IBM

Inventor： ISHAQ MOUSA HANNA ,  ROBERTS STANLEY ,  RYAN JAMES GARDNER

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/285 ,  H01L21/60

Abstract: @ A method for diffusing a conductivity determining impurity in a semiconductor substrate (10) and making electrical contact thereto by depositing a layer (18) of a rare earth boride material over a predetermined surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the boride material to diffuse into the adjoining portion of the substrate (20, 22) to modify its conductive characteristics. At the same time a good electrical ohmic contact is established between the boride material and the adjoining substrate portion while the boride material retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment.

公开(公告)号：DE3483659D1

公开(公告)日：1991-01-10

申请号：DE3483659

申请日：1984-05-16

Applicant: IBM

Inventor： ROBERTS STANLEY ,  WHITE FRANCIS ROGER

IPC: H01L29/78 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/31

公开(公告)号：DE3370558D1

公开(公告)日：1987-04-30

申请号：DE3370558

申请日：1983-05-25

Applicant: IBM

Inventor： HSIEH NING ,  IRENE EUGENE ARTHUR ,  ISHAQ MOUSA HANNA ,  ROBERTS STANLEY

IPC: C01B33/12 ,  B05D5/12 ,  C01B33/113 ,  H01B3/02 ,  H01G2/12 ,  H01G4/06 ,  H01G4/08 ,  H01G4/10 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01L29/94

Abstract: An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400°C or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

公开(公告)号：DE68924468T2

公开(公告)日：1996-05-30

申请号：DE68924468

申请日：1989-11-08

Applicant: IBM

Inventor： ROBERTS STANLEY ,  KAANTA CARTER WELLING

IPC: H01L21/768 ,  H01L23/522

Abstract: An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.

公开(公告)号：DE3469108D1

公开(公告)日：1988-03-03

申请号：DE3469108

申请日：1984-09-21

Applicant: IBM

Inventor： BOULDIN DENNIS PATRICK ,  HALLOCK DALE PAUL ,  ROBERTS STANLEY ,  RYAN JAMES GARDNER

IPC: H01L21/225 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L29/43 ,  H01L21/31

Abstract: A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.

公开(公告)号：DE3175507D1

公开(公告)日：1986-11-27

申请号：DE3175507

申请日：1981-06-05

Applicant: IBM

Inventor： FATULA JOSEPH JOHN ,  ROBERTS STANLEY

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/321 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/90 ,  H01L21/285 ,  H01L21/31

Abstract: A method of forming a refractory metal silicide pattern on a substrate by forming a blanket layer (12) of Si0 2 on the substrate (10), depositing a blanket layer (14) of polycrystalline Si over the Si0 2 layer, defining a pattern in the blanket Si layer (14) thereby exposing selected areas of the SiO 2 layer (12), depositing a blanket layer (16) of refractory metal silicide on the substrate over the SiO 2 and Si layers, heating the substrate in an oxidizing environment to a temperature sufficient to oxidize the metal silicide layer (16) over the Si to form an upper layer (18) of SiO 2 and to convert the metal silicide layer overlying the SiO 2 layer to a metal rich Si0 2 layer (20), and exposing the oxidized surface to an etchant that selectively etches away the metal rich SiO 2 layer (20).