公开(公告)号：AT459098T

公开(公告)日：2010-03-15

申请号：AT03814644

申请日：2003-12-02

Applicant: IBM

Inventor： COHEN GUY ,  CHRISTIANSEN SILKE

IPC: H01L21/20 ,  H01L21/762

Abstract: A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.