公开(公告)号：JPH10107013A

公开(公告)日：1998-04-24

申请号：JP20491697

申请日：1997-07-30

Applicant: IBM ,  TOSHIBA CORP ,  SIEMENS AG

Inventor： NAEEM MUNIR D ,  BURNS STUART M ,  CHRISTIE ROSEMARY ,  GREWAL VIRINDER ,  WALTER W KOKON ,  NARITA MASAKI ,  BRUNO SPULER ,  SHII HOA YAN

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To make more vertical sidewall shape while reducing the corrosion by a method wherein aluminum and aluminum alloy are anisotropically etched away by RIE using specific low power and pressure. SOLUTION: In the title process, aluminum and aluminum alloy are anisotropically etched away by RIE using low power (not exceeding 350W) and low pressure (not exceeding 15mT). Within an upper layer 14 and a bottom layer 10, the physical etching process called sputtering is performed while in a bulk aluminum layer 12, the chemical process is performed. As for the reaction gas of RIE, chlorine, HCl and inert gas (e.g. nitrogen, argon, helium, etc.) are enumerated. Through these procedures, the corrosion of sidewall and the other problems posed by high power RIE can be solved. Besides, a photoresist 16 can be removed more easily while it is released.

公开(公告)号：CA1226681A

公开(公告)日：1987-09-08

申请号：CA504798

申请日：1986-03-24

Applicant: IBM

Inventor： CHRISTIE ROSEMARY ,  HWANG BAO-TAI ,  KU SAN-MEI ,  SICKLER JANET M

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/308 ,  H01L21/316 ,  H01L21/762 ,  H01L21/72

Abstract: Disclosed is a method of forming in a monocrystalline silicon body an optimum recessed oxide isolation structure with reduced steepness of the bird's neck. Starting from a monocrystalline silicon body, there is formed thereon a layered structure of first silicon dioxide, polycrystalline silicon, second silicon dioxide and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form the oxide isolation pattern within the silicon body. The exposed areas of the silicon body are anisotropically reactive ion etched to an initial portion of the desired depth obtaining the corresponding portion of the trench having substantially vertical walls. Then by chemical etching the trench is extended to a final portion of the desired depth obtaining inwardly sloped walls in the final portion. The body is then thermally oxidized until the desired oxide isolation penetrates to the desired depth within the silicon body.

公开(公告)号：DE3672174D1

公开(公告)日：1990-07-26

申请号：DE3672174

申请日：1986-07-04

Applicant: IBM

Inventor： CHRISTIE ROSEMARY ,  HWANG BAO-TAI ,  KU SAN-MEI ,  SICKLER JANET MARION

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/308 ,  H01L21/316 ,  H01L21/762