公开(公告)号：JP2000082741A

公开(公告)日：2000-03-21

申请号：JP22393999

申请日：1999-08-06

Applicant: IBM

Inventor： GRILL ALFRED ,  CHRISTOPHER VINCENT YANES ,  PATEL VISHNUBHAI V ,  CATHERINE LYNN ZENGER

IPC: H01L21/283 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a high performance mutual connection structure whereto one or a plurality of fluorinated dielectric insulation layers and one or a plurality of conductive wiring levels electrically connected by a conductive via are provided, and a wiring level and a via are completely insulated from a fluorinated dielectric by at least one fluorine resistance capping material and/or a fluorine resistance linear material. SOLUTION: One or a plurality of fluorinated dielectric insulation layers 250 and one or a plurality of conductive wiring pattern layers 50, 60 electrically connected by conductive vias 70, 80 are provided. A conductive wiring pattern and a via are completely insulated from a fluorinated dielectric insulation layer by at least one fluorine resistance capping material selected from a group comprising Ag, Al, Al-Ti, Co, Cr, Cu, In, Ir, Mg, Mn, Pd, Pt, Sn, and oxide, nitride and silicide thereof and a mixture thereof, Si-containing DLC and Si-O containing DLC.