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    OPTICAL MEMORY DEVICE
    1.
    发明专利
    OPTICAL MEMORY DEVICE 失效

    公开(公告)号：JPH10177721A

    公开(公告)日：1998-06-30

    申请号：JP31361897

    申请日：1997-11-14

    Applicant: IBM

    Inventor： BRADY MICHAEL J ,  BRAREN BODIL E ,  GAMBINO RICHARD J ,  GRILL ALFRED ,  PATEL VISHNUBHAI V

    IPC: B41M5/26 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/30

    Abstract: PROBLEM TO BE SOLVED: To obtain an optical memory medium based on completely novel memory principle and to obtain an optical memory device using this medium by recording data corresponding to characteristics of an amorphous solid selected from a group of materials each having refractive index and reflectance. SOLUTION: The amorphous solid is selected from a group of diamond-like carbon, silicon carbide, boron carbide, boron nitride, amorphous silicon and amorphous germanium, and the solid contains hydrogen by up to 50 atm% with covalent bonds. A specified region of the amorphous solid having a first refractive index and having atoms with covalent bonds is heated with laser light to change the refractive index in the heated area to a second refractive index. Thus, two states can be produced to correspond the memory of data without dissolving or crystallizing the amorphous solid. The density of the solid is changed by heating, which accompanies changes in the refractive index and reflectance.

    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE, A METHOD FOR FABRICATING THE SAME, AND AN ELECTRONIC DEVICE CONTAINING THE SAME
    3.
    发明申请
    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE, A METHOD FOR FABRICATING THE SAME, AND AN ELECTRONIC DEVICE CONTAINING THE SAME 审中-公开
    作为半导体器件中的介电或交互介质的超导介电常数材料，其制造方法以及包含其的电子器件

    公开(公告)号：WO0243119A3

    公开(公告)日：2003-03-13

    申请号：PCT/US0150830

    申请日：2001-10-25

    Applicant: IBM

    Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI V

    IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

    CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

    Abstract translation: 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如环状硅氧烷和含有环结构的有机分子，例如四甲基环四硅氧烷和环戊烯氧化物。 为了稳定PECVD反应器中的等离子体，从而提高沉积膜的均匀性，将CO 2作为载气添加到TMCTS中，或者将CO 2或CO 2和O 2的混合物加入到PECVD反应器中。

    Ultralow dielectric constant material as an intra-level or inter-level dielectric in semiconductor device
    4.
    发明专利
    Ultralow dielectric constant material as an intra-level or inter-level dielectric in semiconductor device 审中-公开
    超导介电常数材料作为半导体器件中的级内或层间电介质

    公开(公告)号：JP2011119770A

    公开(公告)日：2011-06-16

    申请号：JP2011052860

    申请日：2011-03-10

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GRILL ALFRED ,  PATEL VISHNUBHAI V

    IPC: H01L21/312 ,  H01L21/768 ,  C23C16/30 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

    CPC classification number: C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide an ultralow dielectric material having an dielectric constant of approximate 2.6 or less and a method for preparing the same. SOLUTION: A thermally stable ultralow dielectric constant film, which contains an Si atom, C atom, O atom, and H atom, has a covalent bond three dimensional network structure, and has a dielectric constant of 2.6 or less, is provided. Moreover, the dielectric constant film can have a covalent bond ring network too. The covalent bond three dimensional network structure includes an Si-O covalent bond, Si-C bond, Si-H bond, C-H covalent bond, and C-C covalent bond, and if necessary, it can include an F and N. On the film, if necessary, a Ge atom is substituted for a part of the Si atom. The film has a thickness of 1.3 micrometer or less and has a crack growth rate in water of 10 -10 meter/sec or less. Moreover, a back end of line (BEOL) mutual connection structure including the film as a BEOL insulator, cap, or hard mask layer is provided too. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供介电常数为2.6或更小的超低介电材料及其制备方法。 解决方案：提供含有Si原子，C原子，O原子和H原子的热稳定的超低介电常数膜，具有共价键三维网络结构，并且具有2.6以下的介电常数 。 此外，介电常数膜也可以具有共价键环网络。 共价键三维网络结构包括Si-O共价键，Si-C键，Si-H键，CH共价键和CC共价键，如果需要，它可以包括F和N.在薄膜上， 如果需要，用锗原子代替一部分Si原子。 该膜的厚度为1.3微米以下，水的裂纹生长率为10 -10秒/秒以下。 此外，还提供了包括作为BEOL绝缘体，帽或硬掩模层的膜的线后端（BEOL）相互连接结构。 版权所有（C）2011，JPO＆INPIT

    METHOD AND MATERIAL FOR INTEGRATING FLUORINE-CONTAINING DIELECTRIC
    5.
    发明专利
    METHOD AND MATERIAL FOR INTEGRATING FLUORINE-CONTAINING DIELECTRIC 失效

    公开(公告)号：JP2000082741A

    公开(公告)日：2000-03-21

    申请号：JP22393999

    申请日：1999-08-06

    Applicant: IBM

    Inventor： GRILL ALFRED ,  CHRISTOPHER VINCENT YANES ,  PATEL VISHNUBHAI V ,  CATHERINE LYNN ZENGER

    IPC: H01L21/283 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

    Abstract: PROBLEM TO BE SOLVED: To provide a high performance mutual connection structure whereto one or a plurality of fluorinated dielectric insulation layers and one or a plurality of conductive wiring levels electrically connected by a conductive via are provided, and a wiring level and a via are completely insulated from a fluorinated dielectric by at least one fluorine resistance capping material and/or a fluorine resistance linear material. SOLUTION: One or a plurality of fluorinated dielectric insulation layers 250 and one or a plurality of conductive wiring pattern layers 50, 60 electrically connected by conductive vias 70, 80 are provided. A conductive wiring pattern and a via are completely insulated from a fluorinated dielectric insulation layer by at least one fluorine resistance capping material selected from a group comprising Ag, Al, Al-Ti, Co, Cr, Cu, In, Ir, Mg, Mn, Pd, Pt, Sn, and oxide, nitride and silicide thereof and a mixture thereof, Si-containing DLC and Si-O containing DLC.

    COUPLING OF MOLECULAR UNITS BY DESELENIZATION OF SELENOCARBONYL OUNDS
    7.
    发明专利
    COUPLING OF MOLECULAR UNITS BY DESELENIZATION OF SELENOCARBONYL OUNDS 未知

    公开(公告)号：CA1058624A

    公开(公告)日：1979-07-17

    申请号：CA223170

    申请日：1975-03-21

    Applicant: IBM

    Inventor： ENGLER EDWARD M ,  PATEL VISHNUBHAI V

    IPC: C07D339/06 ,  C07D343/00 ,  C07D345/00 ,  H01B1/12 ,  C07D421/04

    Abstract: of the Invention Organic molecules can be coupled via their selenocarbonyl derivatives. Generally, the synthesis can be described by the following reaction equation: where can be a cyclic or heterocyclic organic compound and R can be alkoxy, phenoxy or phenyl, preferably CH3O, C2H5O, C6H5O, C6H5 and the like. The reaction is usually carried out in a refluxing solvent, the choice of the solvent being determined by the stability and by the ease of coupling of a particular substrate. Groups that tend to stabilize the selenocarbonyl require higher boiling solvents and longer refluxing times. Aromatic solvents, such as benzene or toluene are well-suited for the coupling reaction. In some cases, refluxing the substrate in the alkoxy-phosphorus base as solvent may be advantageous. This new coupling procedure permits the synthesis of the hitherto unknown compounds: tetraselenofulvalene (TScF), the selenium analogue of tetrathiofulvalene (TTF), and disolenodithiofulvalene (DSeDTF). Highly conducting char?e transfer salts of tetraselenofulvalere and diselenodithiofulvalene with totracyano-p-quinodimethane have also been prepared. The materials of this invention are useful in the organic electronic devices described the United States Patent No. 3,953,874, issued April 27, 1970, to Arieh Aviram et al. and assigned to the same assignee as is the present application.

    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE
    10.
    发明专利
    AN ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRALEVEL OR INTERLEVEL DIELECTRIC IN A SEMICONDUCTOR DEVICE 未知

    公开(公告)号：AU2003243631A1

    公开(公告)日：2004-01-06

    申请号：AU2003243631

    申请日：2003-06-18

    Applicant: IBM

    Inventor： GRILL ALFRED ,  PATEL VISHNUBHAI V

    IPC: H01L21/768 ,  C23C16/30 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/00

    Abstract: There is provided a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms and having a covalently bonded tri-dimensional network structure and a dielectric constant of not more than 2.6. The dielectric constant film may additionally have a covalently bonded ring network. The covalently bonded tri-dimensional (i.e., three dimensional) network structure comprises Si-O, Si-C, Si-H, C-H and C-C covalent bonds and may optionally contain F and N. In the film, the Si atoms may optionally be partially substituted with Ge atoms. The dielectric constant film has a thickness of not more than 1.3 micrometers and a crack propagation velocity in water of less than 10 meters per second. There is further provided a back-end-of-the-line (BEOL) interconnect structure comprising the inventive dielectric film as a BEOL insulator, cap or hardmask layer.

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