公开(公告)号：JPH1167666A

公开(公告)日：1999-03-09

申请号：JP16830998

申请日：1998-06-16

Applicant: IBM

Inventor： CARDONE FRANK ,  CHU JACK ON ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/10 ,  H01L29/36 ,  H01L29/778 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To enhance a p-doping concentration such as in CMOS logic or the like so as to make a thin layer structure, by growing, on an upper surface, a first epitaxial layer composed of Ge which has been doped at a specified concentration with a thickness being less than a critical level, and further growing a second epitaxial layer composed of Si or SiGe. SOLUTION: This structure includes a single-crystal semiconductor substrate 32 having an upper surface 33, a first epitaxial layer 36 formed on the upper surface 33, and a second epitaxial layer 40 formed on the first epitaxial layer 36. The first epitaxial layer 36 has a thickness less than a critical thickness and a dopant concentration exceeding 5×10 atoms/cc, and has an intermittent doping profile structure, the dopant being selected from groups composed of phosphorus and arsenic. The second layer 40 contains a material selected from groups consisting of Si and SiGe. The thickness of the first layer 36 ranges 0.5-2 nm.