公开(公告)号：JP2001284453A

公开(公告)日：2001-10-12

申请号：JP2001033861

申请日：2001-02-09

Applicant: IBM

Inventor： JUDETH M RUBINO ,  JAHNES CHRISTOPHER ,  LINIGER ERIC G ,  RYAN JAMES G ,  CARLOS J SANBUSETEI ,  CARDONE FRANK ,  PURUSHOTHAMAN SAMPATH ,  PHIZHIMONS JOHN A ,  STEVEN M GATES

IPC: C22F1/10 ,  C22C19/00 ,  C22F1/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/76 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric barrier with a superior diffusion characteristic for copper and adhesion, on a copper conductor. SOLUTION: A method comprises; 1) preparing a substrate having a copper conductor, 2) putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, 3) carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then 4) putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and 5) carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.

公开(公告)号：JPH1167666A

公开(公告)日：1999-03-09

申请号：JP16830998

申请日：1998-06-16

Applicant: IBM

Inventor： CARDONE FRANK ,  CHU JACK ON ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/10 ,  H01L29/36 ,  H01L29/778 ,  H01L29/812

Abstract: PROBLEM TO BE SOLVED: To enhance a p-doping concentration such as in CMOS logic or the like so as to make a thin layer structure, by growing, on an upper surface, a first epitaxial layer composed of Ge which has been doped at a specified concentration with a thickness being less than a critical level, and further growing a second epitaxial layer composed of Si or SiGe. SOLUTION: This structure includes a single-crystal semiconductor substrate 32 having an upper surface 33, a first epitaxial layer 36 formed on the upper surface 33, and a second epitaxial layer 40 formed on the first epitaxial layer 36. The first epitaxial layer 36 has a thickness less than a critical thickness and a dopant concentration exceeding 5×10 atoms/cc, and has an intermittent doping profile structure, the dopant being selected from groups composed of phosphorus and arsenic. The second layer 40 contains a material selected from groups consisting of Si and SiGe. The thickness of the first layer 36 ranges 0.5-2 nm.

公开(公告)号：DE69836654D1

公开(公告)日：2007-02-01

申请号：DE69836654

申请日：1998-06-26

Applicant: IBM

Inventor： CARDONE FRANK ,  CHU JACK OON ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/10 ,  H01L29/36 ,  H01L29/772 ,  H01L29/778 ,  H01L29/812

Abstract: A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

公开(公告)号：DE69836654T2

公开(公告)日：2007-09-27

申请号：DE69836654

申请日：1998-06-26

Applicant: IBM

Inventor： CARDONE FRANK ,  CHU JACK OON ,  ISMAIL KHALID EZZELDIN

IPC: H01L21/205 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L21/338 ,  H01L29/10 ,  H01L29/36 ,  H01L29/772 ,  H01L29/778 ,  H01L29/812

Abstract: A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.