公开(公告)号：DE69115847T2

公开(公告)日：1996-07-11

申请号：DE69115847

申请日：1991-10-14

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HATZAKIS MICHAEL ,  LEE KAM L ,  PETEK BOJAN ,  SLONCZEWSKI JOHN C

IPC: G01B7/34 ,  B81B1/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/54 ,  G01Q70/12 ,  G01R1/067 ,  G01R1/07 ,  H01J37/28 ,  G01N27/00 ,  G01R31/315

公开(公告)号：DE69115847D1

公开(公告)日：1996-02-08

申请号：DE69115847

申请日：1991-10-14

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HATZAKIS MICHAEL ,  LEE KAM L ,  PETEK BOJAN ,  SLONCZEWSKI JOHN C

IPC: G01B7/34 ,  B81B1/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/54 ,  G01Q70/12 ,  G01R1/067 ,  G01R1/07 ,  H01J37/28 ,  G01N27/00 ,  G01R31/315

公开(公告)号：CA1292965C

公开(公告)日：1991-12-10

申请号：CA507433

申请日：1986-04-24

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HAHN PETER O ,  HO PAUL S ,  LEFAKIS HARALAMBOS ,  RUBLOFF GARY W

IPC: C08J7/06 ,  C08J7/18 ,  C23C14/02 ,  C23C14/20

Abstract: Y09-85-014 A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Beams of low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000eV, while the energy of the incident photons is about 0.2 - 500eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperature or elevated temperatures are suitable.