公开(公告)号：JP2001057085A

公开(公告)日：2001-02-27

申请号：JP2000210249

申请日：2000-07-11

Applicant: IBM

Inventor： KIRIHATA TOSHIAKI ,  DANIEL SUTORASUKA ,  NARAYAN CHANDRASEKHAR ,  WILLIAM TONTEI ,  CLAUDE BARTIN ,  NICK BANHIIRU

IPC: G11C14/00 ,  G11C11/00 ,  G11C16/02 ,  G11C16/04 ,  G11C29/04 ,  H01L21/8246 ,  H01L27/112 ,  G11C29/00

Abstract: PROBLEM TO BE SOLVED: To obtain a partially non-volatile dynamic random access memory(PNDRAM). SOLUTION: A partially non-volatile dynamic random access memory PNDRAM uses a DRAM array formed by plural single transistors 1T cells or two transistors 2T cells. The cell is electrically programmable as a non- volatile memory. Therefore, single chip design characteristic of both of a dynamic random access memory DRAM and an electrically programmable read only memory EPROM can be obtained. A DRAM and an EPROM integrated into a PNDRAM can be always and easily reconstituted during manufacturing or in a market. The PNDRAM has plural applications as a single chip such as a main memory related to ID, BIOS, or operating system information and the like.