公开(公告)号：CA1153674A

公开(公告)日：1983-09-13

申请号：CA399150

申请日：1982-03-23

Applicant: IBM

Inventor： CHUANG TUNG J ,  COBURN JOHN W ,  KAY ERIC

IPC: H01L21/302 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306

Abstract: SA9 80 049 ETCHING PROCESS WITH VIBRATIONALLY EXCITED SF6 of the Invention A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.

公开(公告)号：CA1113352A

公开(公告)日：1981-12-01

申请号：CA314409

申请日：1978-10-26

Applicant: IBM

Inventor： COBURN JOHN W ,  WINTERS HAROLD F

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B01J17/00

Abstract: SATURATED AND UNSATURATED HALOCARBON GASES IN PLASMA ETCHING A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodiment is a gaseous mixture containing C3F6 and C2F6.