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    Epitaxial garnet films
    2.
    发明授权
    Epitaxial garnet films 失效
    外来GARNET膜

    公开(公告)号：US3607698A

    公开(公告)日：1971-09-21

    申请号：US3607698D

    申请日：1968-10-11

    Applicant: IBM

    Inventor： KAY ERIC ,  SAWATZKY ERICH

    IPC: C23C14/08 ,  H01F10/24 ,  H01F41/18 ,  C23C15/00

    CPC classification number: C23C14/08 ,  H01F10/24 ,  H01F41/186

    Abstract: A method of making improved garnet thin films in a sputtering apparatus. The film is sputtered from a source containing yttrium or rare earth garnet in bulk form onto a garnet substance. Epitaxial films with square hysteresis loops are obtained only when the garnet substrate is in the (111) orientation.

    5.
    发明专利
    未知

    公开(公告)号：DE1515299A1

    公开(公告)日：1969-07-31

    申请号：DE1515299

    申请日：1964-06-26

    Applicant: IBM

    Inventor： KAY ERIC

    IPC: C23C14/35 ,  H01J37/34

    9.
    发明专利
    未知

    公开(公告)号：DE1515303A1

    公开(公告)日：1969-07-24

    申请号：DE1515303

    申请日：1965-07-21

    Applicant: IBM

    Inventor： KAY ERIC ,  PAUL POENISCH ARTHUR

    IPC: C23C14/54 ,  H01J37/34

    Abstract: An article, such as a substrate 20 is coated with metal by a cathode sputtering process, the temperature of the article during the process being maintained constant to ensure that the characteristics of the coating do not vary at different locations thereof. The sputtering environment is a cylindrical glass vessel 10 evacuated to a pressure in the range of 10-1 to 10-7 TORR. The vessel houses a cathode 12 and an anode 22 on which is placed the substrate 20, projections 98, 98' on the vessel having coils 91, 91' placed thereon to produce a magnetic field in the plane of the substrate. The cathode 12 is arranged to be water cooled by means of a water jacket 14 and the anode includes an electric heater and fluid cooling means, the anode heating and cooling means being controlled by a temperature sensing device in the anode. Ionisable gas is fed to the vessel 10 by way of the port 32 and a shield 34 is placed around the cathode 12 to ensure that discharge takes place only from the face of the cathode. A shield 92 is placed between the cathode and anode until sputtering conditions are reached when it is suddenly withdrawn. The sputtering apparatus may be as disclosed in Specifications 1,050,855 and 1,054,660.

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