公开(公告)号：DE3262190D1

公开(公告)日：1985-03-21

申请号：DE3262190

申请日：1982-03-23

Applicant: IBM

Inventor： CHUANG TUNG JUNG ,  COBURN JOHN WYLLIE ,  KAY ERIC

IPC: H01L21/302 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306 ,  C23F1/00

Abstract: A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.

公开(公告)号：DE2963520D1

公开(公告)日：1982-10-07

申请号：DE2963520

申请日：1979-02-21

Applicant: IBM

Inventor： COBURN JOHN WYLLIE ,  WINTERS HAROLD FRANKLIN

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31 ,  H01L21/306 ,  C23C15/00

Abstract: A method of plasma etching silica at a faster rate than silicon in an article containing both silica and silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbons contain fluorine. A preferred embodiment is a gaseous mixture containing C3F6 and C2F6.

公开(公告)号：DE2860917D1

公开(公告)日：1981-11-05

申请号：DE2860917

申请日：1978-12-01

Applicant: IBM

Inventor： COBURN JOHN WYLLIE ,  KAY ERIC

IPC: C08F14/00 ,  B05D7/24 ,  C08F2/00 ,  C08F2/52 ,  C08F8/00 ,  C08F8/42 ,  C23C14/02

Abstract: A method of forming a polymer film containing metal therein includes the steps of providing an electrode of a metal that can be etched by a halogen, providing a substrate for the polymer film to be deposited thereon, and passing a halocarbon monomer through a plasma system so that the metal etched from the electrode forms a volatile halide and is incorporated in the polymer film that is deposited on the substrate.