公开(公告)号：CA2011233A1

公开(公告)日：1990-12-09

申请号：CA2011233

申请日：1990-03-01

Applicant: IBM

Inventor： CODELLA CHRISTOPHER F ,  ROVEDO NIVO ,  OGURA SEIKI

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L29/76

Abstract: FIELD-EFFECT-TRANSISTOR WITH ASYMMETRICAL STRUCTURE A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.