公开(公告)号：US3881884A

公开(公告)日：1975-05-06

申请号：US40612573

申请日：1973-10-12

Applicant: IBM

Inventor： COOK HERBERT CARL ,  FARRAR PAUL ALDEN ,  HALLEN ROBERT LEE

IPC: H05K3/24 ,  H01B1/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/52 ,  H01L23/532 ,  H05K3/38 ,  H05K3/46 ,  H01L19/00

CPC classification number: H05K3/244 ,  H01B1/00 ,  H01L21/00 ,  H01L23/53242 ,  H01L23/53252 ,  H01L24/11 ,  H01L2224/05171 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H05K3/388 ,  H05K2203/1105 ,  H01L2924/00 ,  H01L2924/00014

Abstract: Disclosed is a method for the manufacture of composite thin films useful among other applications as electronic microcircuit interconnections, fuses, and contacts, terminal pads and voltage distribution ring metallurgy comprising in carrying out an integral circuit fabrication process the steps of first depositing a barrier layer of antidiffusion material, such as chromium, followed by superimposing thereon a film of highly conductive metals susceptible to corrosion and followed by the deposition of a highly corrosive resistant metal film. A subtractive etch pattern is formed in the composite metal film followed by heating the structure to an elevated temperature for a predetermined period of time so that the uppermost layer of the composite flows by diffusion over the edge section to protect the conductive metal film from corrosive effects.

Abstract translation: 公开了一种用于制造复合薄膜的方法，其用作电子微电路互连，保险丝和触点，端子焊盘和电压分布环冶金，其中包括在进行积分电路制造工艺中的步骤，首先沉积阻挡层 抗扩散材料如铬，然后在其上叠加易于腐蚀的高导电性金属膜，随后沉积高度耐腐蚀的金属膜。 在复合金属膜中形成减去蚀刻图案，然后将结构加热到升高的温度一段预定的时间，使得复合材料的最上层通过边界部分扩散流动，以保护导电金属膜免受腐蚀影响 。

公开(公告)号：DE2248840A1

公开(公告)日：1973-04-12

申请号：DE2248840

申请日：1972-10-05

Applicant: IBM

Inventor： COOK HERBERT CARL ,  FARRAR PAUL ALLEN ,  HALLEN ROBERT LEE

IPC: C23C14/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/24 ,  C23C13/00

公开(公告)号：DE3279356D1

公开(公告)日：1989-02-16

申请号：DE3279356

申请日：1982-08-25

Applicant: IBM

Inventor： COOK HERBERT CARL ,  TROUTMAN RONALD ROY

IPC: G11C17/00 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792

Abstract: A memory system is provided wherein extended injection-limited programming techniques attain a substantially uniform programming behavior from an ensemble of fabricated devices or cells to provide the maximum obtainable voltage threshold shift within a minimum time period. in order to produce these desired results, a floating gate (FG) of a device (10A') is charged by applying to the control gate (CG) of the device a first voltage during a portion of this time period which produces an accelerating field in a dielectric layer disposed adjacent to the floating gate (FG) and then applying to the control gate (CG) during the remaining portion of this time period a second voltage of greater magnitude than that of the first voltage prior to or when the accumulation of charge on the floating gate causes a retarding field to be established in the dielectric layer.

公开(公告)号：DE2440481A1

公开(公告)日：1975-04-24

申请号：DE2440481

申请日：1974-08-23

Applicant: IBM

Inventor： COOK HERBERT CARL ,  FARRAR PAUL ALDEN ,  HALLEN ROBERT LEE

IPC: H05K3/24 ,  H01B1/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/52 ,  H01L23/532 ,  H05K3/38 ,  H05K3/46 ,  H05K3/16

Abstract: Disclosed is a method for the manufacture of composite thin films useful among other applications as electronic microcircuit interconnections, fuses, and contacts, terminal pads and voltage distribution ring metallurgy comprising in carrying out an integral circuit fabrication process the steps of first depositing a barrier layer of antidiffusion material, such as chromium, followed by superimposing thereon a film of highly conductive metals susceptible to corrosion and followed by the deposition of a highly corrosive resistant metal film. A subtractive etch pattern is formed in the composite metal film followed by heating the structure to an elevated temperature for a predetermined period of time so that the uppermost layer of the composite flows by diffusion over the edge section to protect the conductive metal film from corrosive effects.