公开(公告)号：AU5884686A

公开(公告)日：1987-05-21

申请号：AU5884686

申请日：1986-06-13

Applicant: IBM

Inventor： COOK ROBERT KIMBAL ,  SHEPARD JOSEPH FRANCIS

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H05K3/06

Abstract: A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.

公开(公告)号：AU576086B2

公开(公告)日：1988-08-11

申请号：AU5884686

申请日：1986-06-13

Applicant: IBM

Inventor： COOK ROBERT KIMBAL ,  SHEPARD JOSEPH FRANCIS

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H05K3/06

Abstract: A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.