公开(公告)号：US3617411A

公开(公告)日：1971-11-02

申请号：US3617411D

申请日：1969-01-14

Applicant: IBM

Inventor： COUTURE ROGER A ,  LAJZA JOHN J JR ,  WRIGHT WILLIAM E

IPC: C23C22/00 ,  G03F7/11 ,  C23B3/00 ,  C23F1/02 ,  C23F7/26

CPC classification number: C23C22/00 ,  G03F7/11 ,  Y10S428/901

Abstract: Very small patterns may be etched in aluminum or other metal surfaces using photoresist to mask areas of the surfaces where etching is not desired by applying a Werner complex of chromium with a carboxylic acid to the metal surface. The process is particularly useful for etching conducting lines in microminiature semiconductor device fabrication because the chromium complex increases the adhesion of the photoresist to the aluminum sufficiently to improve line resolution in subsequent etching, and does not increase bridging between adjacent conducting lines.

公开(公告)号：US3642549A

公开(公告)日：1972-02-15

申请号：US3642549D

申请日：1969-01-15

Applicant: IBM

Inventor： COUTURE ROGER A ,  LAJZA JOHN J JR

IPC: C03C15/00 ,  H01L21/311 ,  C09K3/00 ,  G01N31/22

CPC classification number: C03C15/00 ,  H01L21/31111 ,  Y10T436/108331

Abstract: In the etching through a protective glass coating to expose an underlying metal, overetching is prevented by adding a polyhydric alcohol, for example glycerin, to a glass etchant, which causes a color change on a metal, for example aluminum or molybdenum, indicating that etching through the glass coating has been completed.

Abstract translation: 在通过保护性玻璃涂层进行蚀刻以暴露下面的金属时，通过向玻璃蚀刻剂中加入多元醇（例如甘油）来防止过蚀刻，这导致金属上的颜色变化，例如铝或钼，表明蚀刻 通过玻璃涂层已经完成。

公开(公告)号：US3586554A

公开(公告)日：1971-06-22

申请号：US3586554D

申请日：1969-01-15

Applicant: IBM

Inventor： COUTURE ROGER A ,  GLEASON ROBERT T ,  LAJZA JOHN J JR

IPC: G03F7/075 ,  H01L21/312 ,  H01L7/00

CPC classification number: H01L21/3121 ,  G03F7/0751 ,  Y10S438/948

Abstract: VERY SMALL PATTERNS MAY BE ETCHED IN SILICON DIOXIDE OR OTHER OXIDE SURFACES USING PHOTORESIST TO MASK AREAS OF SURFACES WHERE ETCHING IS NOT DESRIED BY APPLYING A DISILYLAMIDE TO THE SURFACE TO INCREASE THE AHESION OF THE PHOTORESIST. THE PROCESS IS PARTICULARLY USEFUL FOR ETCHING PATTERNS IN SILICON DIOXIDE MASKS USED IN THE FABRICATION OF MICROMINIATURE SEMICONDUCTOR DEVICES.