公开(公告)号：DE2803732A1

公开(公告)日：1978-09-14

申请号：DE2803732

申请日：1978-01-28

Applicant: IBM

Inventor： CASOWITZ BARRY NORMAN ,  COWAN MICHAEL DAVID ,  HUMPHREYS CHARLES BRUCE ,  SATYA AKELLA VENKATA SURYA

IPC: G01R31/26 ,  G01R31/28 ,  H01L21/22 ,  H01L21/66

Abstract: An electrical defect density monitor for semiconductor device fabrication utilizing a silicide of a formed transitional metal (such as platinum silicide) on a surface of a silicon substrate as a resistor in parallel with the resistance of the underlying substrate, including diffused regions, to improve measurement sensitivity of high sheet resistivity areas. The measurement can be employed for measuring the integrity of diffused regions and/or of dielectric coatings.