1.
    发明专利
    未知

    公开(公告)号:DE3483880D1

    公开(公告)日:1991-02-07

    申请号:DE3483880

    申请日:1984-10-16

    Applicant: IBM

    Abstract: @ A voltage generating system provides a plurality of different voltages for powering a dynamic nonvolatile random access memory (NVRAM) chip. The voltage generating system includes a pair of charge pumps (28,48). Each charge pump is coupled to a controller (22, 44) that senses the voltage level at the output of the charge pump and generates an enabling signal when said voltage is at a predetermined value. The signal activates a power down circuit (34, 56) which adjusts the charge pump output to a desired voltage level. A programmable oscillator (18, 40) provides the clocking signals for the controller. The charge pumps and programmable oscillators are periodically deactivated by the controller. As a result, the overall power consumption of the chip is reduced.

    2.
    发明专利
    未知

    公开(公告)号:DE3482747D1

    公开(公告)日:1990-08-23

    申请号:DE3482747

    申请日:1984-10-16

    Applicant: IBM

    Abstract: A programmable oscillator (18) is provided for use on an integrated circuit chip. The oscillator (18) includes a plurality of inverted delay stages (80, 82, ...) connected in tandem between an input (INPUT) and an output node (Z). A single FET device (39) couples a common node (X) to a ground potential. Another FET device (31) controls the control node G. When a logic enabling signal is appropriately applied to the FET devices, the oscillator (18) is controlled so that internal nodes (G, H, ...) of the oscillator float high when it is off and no energy is dissipated. In addition, the ratio of delays between the delay stages (80, 82, ...) and the input stage (92) of the load (37) is such that the load (37) supplies the greater ratio of delays. This ensures that the oscillator's frequency of oscillation tracks the switching speed of the load (37).

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