公开(公告)号：DE3067661D1

公开(公告)日：1984-06-07

申请号：DE3067661

申请日：1980-01-16

Applicant: IBM

Inventor： CROWDER BILLY ,  REISMAN ARNOLD

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/336 ,  H01L23/29 ,  H01L23/31 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L29/43 ,  H01L29/49 ,  H01L29/73 ,  H01L21/283 ,  H01L29/54

Abstract: An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.