公开(公告)号：US3480491A

公开(公告)日：1969-11-25

申请号：US3480491D

申请日：1965-11-17

Applicant: IBM

Inventor： REISMAN ARNOLD ,  LEONHARDT HORST R

IPC: C23F3/04 ,  H01L21/306 ,  H01L7/00

CPC classification number: H01L21/02046 ,  C23F3/04 ,  H01L21/30621 ,  Y10S148/051 ,  Y10S148/054 ,  Y10S148/115 ,  Y10S438/909 ,  Y10S438/971

公开(公告)号：US3577286A

公开(公告)日：1971-05-04

申请号：US3577286D

申请日：1967-10-11

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

IPC: C01G17/04 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L7/36 ,  C23C11/00 ,  H01L7/00

CPC classification number: H01L21/02381 ,  C01G17/04 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02661 ,  Y10S438/974

Abstract: A PROCESS WHICH INCLUDES THE PREPARATION OF A SUBSTRATE AND SUBSEQUENT EPITAXIAL DEPOSITION OF GERMANIUM ON THE SUBSTRATE IS DESCRIBED. PREPARATION OF THE SUBSTRATE, EITHER GERMANIUM OR GALLIUM ARSENIDE, INCLUDES A CHEMICAL TREATMENT STEP TO REMOVE SURFACE FILMS, RAPID QUENCHING, RINSING AND DRYING STEPS, AND A HEATING STEP PRIOR TO DEPOSITION. DEPOSITION OF GERMANIUM IS CARRIED OUT IN AN OPEN TUBE DISPROPORTIONATION SYSTEM, BY INTRODUCING A GERMANIUM HALIDE SPECIE WHICH IS CAPABEL OF DISPROPORTIONATING AT A DEPOSITION SITE IN CONCENTRATIONS AND AT VELOCITIES SUCH THAT THE DEPOSITION OF GERMANIUM TENDS TO BE SURFACE LIMITED RATHER THAN MASS TRANSPORT LIMITED. THE DEPOSITION, PREFERABLY CARRIED OUT ON A (110) ORIENTED SUBSTRATE, IS EPITAXIAL, SMOOTH AND SHINY AND IS SUITABLE FOR SUBSEQUENT PROCESSING REQUIRING PHOTOGRAPHIC TECHNIQUES.

D R A W I N G

公开(公告)号：US3862831A

公开(公告)日：1975-01-28

申请号：US35302673

申请日：1973-04-20

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  REISMAN ARNOLD

IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C07C17/04

CPC classification number: C03C3/102 ,  C03B19/00 ,  C03C3/072 ,  C03C17/02 ,  H01J2211/38

Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

Abstract translation: 因此，在所需的现有衬底结构上从混合玻璃料例如两个起始玻璃原位制造玻璃的方法。 混合玻璃料包括低玻璃化转变温度玻璃和较高玻璃化转变温度的玻璃，该玻璃独特地能够在其整个组成范围内形成连续的玻璃相。 在热循环期间，低玻璃化转变温度玻璃流出并溶解较高的玻璃化转变温度玻璃，从而原位合成新的玻璃。 通过原位方法形成玻璃所需的温度小于首先在外部首先平衡的玻璃相同的组合物然后以玻璃料形式施加到现有的衬底结构并在其上流出所需的温度。 原位合成的新玻璃在高于低玻璃化转变温度玻璃的温度下软化并流动，并且低于较高玻璃化转变温度玻璃的温度，并且在两个起始玻璃之间呈现玻璃化转变温度。

公开(公告)号：US3600242A

公开(公告)日：1971-08-17

申请号：US3600242D

申请日：1968-10-03

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD ,  LIGHT THOMAS B

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L7/36 ,  H01B13/06

CPC classification number: H01L21/02381 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02661 ,  Y10S148/017 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/118 ,  Y10S438/933

Abstract: A PROCESS WHICH STABILIZES THE RESISTIVITY OF AN EPITAXIALLY GROWN LAYER OF GERMANIUM DOPED WITH P-TYPE IMPURITIES AND DEPOSITED IN A LOW TEMPERATURE OPEN TUBE DISPROPORTIONATION SYSTEM FROM A GERMANIUM HALIDE SPECIE UNDER SURFACE LIMITED CONDITION IS DISCLOSED. WHEN P-TYPE DOPANTS ARE DEPOSITED ALONG WITH GERMANIUM IN A SURFACE LIMITED NODE, HEATING SUBSEQUENT TO DEPOSITION TO HIGHER TEMPERATURES THAN THE DEPOSITION TEMPERATURE BROUGHT ABOUT CHANGES IN RESISTIVITY RESULTING IN INOPERABLE DEVICES OR DEVICES HAVING POOR CHARACTERISTICS. THE RESISTIVITY CHANGES CAN BE OVERCOME BY A PLOST-DEPOSITION ANNEAL ALONE OR BY ADJUSTING DEPOSITION PARAMETERS, SUCH AS GROWTH RATE AND SUBSTRATE TEMPERATURE IN CONJUNCTION WITH ANNEALING.

公开(公告)号：US3926763A

公开(公告)日：1975-12-16

申请号：US31102272

申请日：1972-11-30

Applicant: IBM

Inventor： REISMAN ARNOLD

IPC: H01J17/49 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/04 ,  H05K3/10 ,  H05K3/14 ,  C23C15/00 ,  B44D1/18

CPC classification number: H01J11/00 ,  H05K1/0289 ,  H05K1/0306 ,  H05K3/002 ,  H05K3/048 ,  H05K3/107 ,  H05K3/143 ,  H05K2201/0376 ,  H05K2201/09036

Abstract: An improved glass panel gas discharge display structure wherein a photolithography step on a plate forming the glass panel is used before metallizing the plate through a mask so that when subsequent dissolution of the mask takes place, the plate is left with embedded metallization essentially coplanar with the surface. The effects of such an embedded electrode structure are that it minimizes attack of the metallization when flow on dielectrics are applied since the sidewalls of the electrodes are protected; it permits application of very thin dielectrics by flow-on, sputtering, plasma spraying, evaporation or other suitable techniques since problems of overcoating around edges are eliminated. It minimizes stresses in the composite structure overlying the substrate support and it minimizes adjacent line interactions when very thin coatings are applied. It also minimizes surface irregularities on panel plates.

公开(公告)号：US3476592A

公开(公告)日：1969-11-04

申请号：US3476592D

申请日：1966-01-14

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

IPC: H01L21/20 ,  H01L29/04 ,  B44D1/18 ,  B44D1/40

CPC classification number: H01L29/045 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02546 ,  Y10S148/051 ,  Y10S148/115

公开(公告)号：CA2002213A1

公开(公告)日：1990-05-10

申请号：CA2002213

申请日：1989-11-03

Applicant: MICROELECTRONICS CENTER OF NOR ,  IBM ,  NORTHERN TELECOM LTD

Inventor： TURLIK IWONA ,  REISMAN ARNOLD ,  NAYAK DEEPAK ,  HWANG LIH-TYNG ,  DISHON GIORA ,  JACOBS SCOTT L ,  DARVEAUX ROBERT F ,  POLEY NEIL M

IPC: H01L23/373 ,  H01L23/473 ,  H01L23/538 ,  H01L25/065 ,  H01L23/34

Abstract: A high performance integrated circuit chip package (10) includes a support (15) substrate (12) having conductors extending from one face to the opposite face thereof and a multilayer wiring substrate (16) on the opposite face of the support substrate for connecting chips mounted thereon to one another and to the conductors. A heat sink includes microchannels at one face thereof, with thermally conductive cushions connecting the one face of the heat sink (26) with the exposed back sides of the chips, to provide a high density chip package with high heat dissipation. The multilayer wiring substrate (16) may be formed by a self-aligned thin film wiring method, with a self-aligned lift off method being employed to form internal wiring planes. The support substrate and heat sink may be formed of blocks of material having thermal expansion matching silicon. The cushions are a low melting point solder, preferably pure indium, and are sufficiently thick to absorb thermal stresses, but sufficiently thin to efficiently conduct heat from the chips to the heat sink.

公开(公告)号：FR2374735A1

公开(公告)日：1978-07-13

申请号：FR7733123

申请日：1977-10-27

Applicant: IBM

Inventor： PARK KYU C ,  REISMAN ARNOLD

IPC: H01J31/24 ,  G02B27/50 ,  H01J9/233 ,  H01J29/39

Abstract: A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.

公开(公告)号：DE2418462A1

公开(公告)日：1974-11-07

申请号：DE2418462

申请日：1974-04-17

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT OTIS ,  REISMAN ARNOLD

IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C03C3/10 ,  C03C3/14 ,  C03C3/24 ,  C03C3/30

Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

公开(公告)号：DE1521795A1

公开(公告)日：1970-02-12

申请号：DE1521795

申请日：1965-08-11

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

IPC: C23F3/00 ,  H01L21/00 ,  H01L21/302

Abstract: Silicon or germanium crystals are vapourpolished by a stream of hydrogen iodide mixed with hydrogen or helium or a mixture thereof in a polishing chamber 9 through which the gas passes. Hydrogen or hydrogen and helium is passed through a heated packed bed 4 of iodine crystals, and hydrogen iodide is produced from the resulting mixture with iodine vapour in a platinum wool catalyst chamber 8.