公开(公告)号：JP2002280222A

公开(公告)日：2002-09-27

申请号：JP2002060436

申请日：2002-03-06

Applicant: IBM

Inventor： GROVES ROBERT A ,  DALE K JEIDASU

IPC: H01F21/12 ,  H03H5/00

Abstract: PROBLEM TO BE SOLVED: To provide a novel improved integrated variable inductor and an inductor/varactor tuning circuit. SOLUTION: The magnetic field of the inductor 32 is reduced by the presence of one or more single-loop winding 34 disposed near the inductor. The single- loop winding has an open circuit, which is selectively closed, and the single loop winding is magnetically coupled to the inductor. The varactor 30 is connected to the inductor to form the inductor/varactor tuning circuit.

公开(公告)号：JP2000150661A

公开(公告)日：2000-05-30

申请号：JP29884299

申请日：1999-10-20

Applicant: IBM

Inventor： ROBERT A GROVES ,  DALE K JEIDASU ,  DOMINIC L NUYEN-NOCK ,  KEITH M WAYLER

IPC: H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To provide a structure of transistor which can be included in a transistor array for application of low noise and high electric power. SOLUTION: This transistor array is provided with a plurality of transistors. Every transistor is provided with an emitter. An emitter area contact 303 is on every emitter area. At least one base area 301 is beneath every emitter area 303, and it is common to a plurality of transistors in the array. At least one base contact 302 is at least on one base area, and it is related to every transistor. A plurality of base contacts are common to at least two transistors in the array. At least one collector reach through is related to every transistor. A collector reach through contact 306 is on every collector reach through.