公开(公告)号：JP2000150661A

公开(公告)日：2000-05-30

申请号：JP29884299

申请日：1999-10-20

Applicant: IBM

Inventor： ROBERT A GROVES ,  DALE K JEIDASU ,  DOMINIC L NUYEN-NOCK ,  KEITH M WAYLER

IPC: H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To provide a structure of transistor which can be included in a transistor array for application of low noise and high electric power. SOLUTION: This transistor array is provided with a plurality of transistors. Every transistor is provided with an emitter. An emitter area contact 303 is on every emitter area. At least one base area 301 is beneath every emitter area 303, and it is common to a plurality of transistors in the array. At least one base contact 302 is at least on one base area, and it is related to every transistor. A plurality of base contacts are common to at least two transistors in the array. At least one collector reach through is related to every transistor. A collector reach through contact 306 is on every collector reach through.