公开(公告)号：JP2000221687A

公开(公告)日：2000-08-11

申请号：JP2000023822

申请日：2000-02-01

Applicant: IBM

Inventor： RIN CHIN FAN ,  KATNANI AHMAD D ,  DOUGLAS CHARLES RA TULIP JR ,  DAVID E ZEGER ,  WILLIAM ROSS BRUNSFOLD ,  ARI AFUZAARI ARUDAKAANII

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075

Abstract: PROBLEM TO BE SOLVED: To obtain the negative tone resist composition comparatively high in silicon content and high in sensitivity and resolution by incorporating a silicon-containing polymer having a phenol group, soluble in an aqueous base, a cross-linking agent, an acid generator and a solvent, and allowing the phenolic polymer containing silicon to have a specific structure. SOLUTION: The composition is a silicon-containing negative resist composition and contains a silicon-containing polymer having a phenol group, soluble in an aqueous base, a cross-linking agent capable of cross-linking the silicon- containing polymer at the sites of the phenolic hydroxyl group, an acid generator and a solvent. The silicon-containing phenolic polymer soluble in an aqueous basic solution has structures represented by the formula in which R1 is an acid-insensitive (inactive) blocking group; Z is an H atom or a -Si(CH3)3; and X is