公开(公告)号：JPH11316460A

公开(公告)日：1999-11-16

申请号：JP3870299

申请日：1999-02-17

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  DELLAGUARDIA RONALD A ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  KHOJASTEH MAHMOUD M ,  LIN QINGHUANG

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To obtain high resolution and superior stability by incorporating a mix of at least two kinds of miscible polymer resins soluble in an aqueous base to make it useful for the blend of a positive type resist. SOLUTION: One of polymer resins soluble in an aq. base is partially protected with protective groups, having high activation energy and the other of the polymer resins soluble in an aqueous base is partially protected with protective groups having low activation energy. The polymer resin to be used is a homopolymer which is soluble in an alkali solution after being deprotected or a multiple polymer containing two or more kinds of repeating monomeric units e.g. a copolymer or a terpolymer and contains polar functional groups which ionize readily. The polar functional groups of the polymer resins are hydroxyl or carboxyl groups. The homopolymer which can be used as the polymer resin is especially preferably polyhydroxystyrene(PHS), and the para-type is most preferable.

公开(公告)号：JP2000089453A

公开(公告)日：2000-03-31

申请号：JP24203899

申请日：1999-08-27

Applicant: IBM

Inventor： WILLIAM R BURUNSUBUORUDO ,  KATNANI AHMAD D ,  PUSHUKARA R VARAANASHII

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a acid-sensitive positive photoresist composition improved in storage life by incorporating the acid-sensitive positive photoresist polymer component and a radiation-sensitive acid-generating component and an inactivated aromatic amine compound. SOLUTION: This photoresist composition comprises the acid-sensitive positive photoresist polymer component selected from a group comprising an acid- sensitive photoresist polymer, an acid-sensitive photoresist polymer having an acid-sensitive compound added, and an acid-insensitive alkali-soluble photoresist polymer having an acid-sensitive alkali-soluble inhibitor added; and the radiation- sensitive acid generating component; and the inactivated aromatic amine compound. It is preferred that the photoresist polymer has an acid-instable group producing an acid, when it is cleft. This composition may contain a solvent for a nonexposed resist.

公开(公告)号：JPH11282166A

公开(公告)日：1999-10-15

申请号：JP1270699

申请日：1999-01-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： BUCCHIGNANO JAMES J ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  LEE KIM Y ,  MOREAU WAYNE M ,  PETRILLO KAREN E

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a chemical amplification resist exhibiting improved preservability of a resist coating and almost or completely free from the effect of vacuum in use by incorporating an aq. base-soluble polymer or copolymer having polar functional groups, a part of which is protected with specified cycloaliphatic ketal substituents.
SOLUTION: The chemical amplification resist contains an aq. base-soluble polymer or copolymer having polar functional groups, some of which are protected with cycloaliphatic ketal substituents represented by the formula RO-X-as acid decomposable protective groups, an acid generating agent, a solvent for the base-soluble polymer or copolymer, a base and, optionally, a surfactant. In the formula, X is an about 3-12C optionally substd. cycloaliphatic functional group and R is about 1-12C linear or branched alkyl or the like.
COPYRIGHT: (C)1999,JPO

Abstract translation: 要解决的问题：提供具有改进的抗蚀剂涂层保存性的化学放大抗蚀剂，几乎或完全没有真空在使用中的作用， 具有极性官能团的碱溶性聚合物或共聚物，其一部分用特定的脂环族缩酮取代基保护。 解决方案：化学增幅抗蚀剂含有水溶液。 具有极性官能团的碱溶性聚合物或共聚物，其中一些由式RO-X代表的脂环族缩酮取代基保护，作为酸可分解的保护基团，酸产生剂，用于碱溶性聚合物或共聚物的溶剂， 碱和任选的表面活性剂。 在该式中，X是约3-12C任选取代的。 脂环族官能团，R为约1-12个直链或支链烷基等。

公开(公告)号：JP2000221687A

公开(公告)日：2000-08-11

申请号：JP2000023822

申请日：2000-02-01

Applicant: IBM

Inventor： RIN CHIN FAN ,  KATNANI AHMAD D ,  DOUGLAS CHARLES RA TULIP JR ,  DAVID E ZEGER ,  WILLIAM ROSS BRUNSFOLD ,  ARI AFUZAARI ARUDAKAANII

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075

Abstract: PROBLEM TO BE SOLVED: To obtain the negative tone resist composition comparatively high in silicon content and high in sensitivity and resolution by incorporating a silicon-containing polymer having a phenol group, soluble in an aqueous base, a cross-linking agent, an acid generator and a solvent, and allowing the phenolic polymer containing silicon to have a specific structure. SOLUTION: The composition is a silicon-containing negative resist composition and contains a silicon-containing polymer having a phenol group, soluble in an aqueous base, a cross-linking agent capable of cross-linking the silicon- containing polymer at the sites of the phenolic hydroxyl group, an acid generator and a solvent. The silicon-containing phenolic polymer soluble in an aqueous basic solution has structures represented by the formula in which R1 is an acid-insensitive (inactive) blocking group; Z is an H atom or a -Si(CH3)3; and X is