公开(公告)号：EP1159757A4

公开(公告)日：2007-05-02

申请号：EP00908385

申请日：2000-01-27

Applicant: IBM

Inventor： STORINO SALVATORE N ,  DAVIES ANDREW DOUGLAS

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/08 ,  H01L27/088 ,  H01L29/786 ,  H03K17/16 ,  H03K19/003

CPC classification number: H01L27/0266

Abstract: An apparatus and method for eliminating parasitic bipolar transistor action in a Silicon On Insulator (SOI) Metal Oxide Semiconductor (MOS) device (44). In accordance with the invention an SOI electronic device and an active discharging device (58, 60) coupled to said SOI electronic device is provided to deactivate the parasitic bipolar transistor. The parasitic bipolar transistor action is deactivated by controlling the conduction of an active discharging device (58, 60), said active discharging device (58, 60) being coupled to said SOI device.

公开(公告)号：WO0055971A8

公开(公告)日：2000-11-09

申请号：PCT/US9919535

申请日：1999-08-27

Applicant: IBM

Inventor： DAVIES ANDREW DOUGLAS ,  STORINO SALVATORE N ,  TRAN JEFF V ,  WILLIAMS ROBERT RUSSELL

IPC: H01L27/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/786 ,  H03K19/003 ,  H03K19/094 ,  H03K19/096 ,  H03K19/20

CPC classification number: H03K19/00315 ,  H01L27/0921 ,  H03K19/094

Abstract: In brief, methods and apparatus are provided for bipolar elimination in silicon-on-insulator (SOI) domino circuits. The apparatus for bipolar elimination in silicon-on-insulator (SOI) domino circuit includes a domino silicon-on-insulator (SOI) field effect transistor (402). An input is coupled to the domino silicon-on-insulator (SOI) field effect transistor (402). A predischarging device is coupled to said domino silicon-on-insulator (SOI) field effect transistor (402). The predischarging device is activated during a precharge mode of the domino circuit, so that the SOI parasitic bipolar transistor is not activated. A dynamic input circuit (300) couples the input to the domino silicon-on-insulator (SOI) field effect transistor (402). The output of the dynamic input circuit (300) is low during the precharge mode. The output of the dynamic input circuit (300) corresponds to the input during the evaluate mode. The output of the dynamic input circuit (300) is used to gate the predischarging device.

Abstract translation: 简而言之，提供了用于绝缘体上硅（SOI）多米诺骨电路中的双极消除的方法和装置。 绝缘体上硅（SOI）多米诺骨电路中的双极消除装置包括绝缘体上硅（SOI）场效应晶体管（402）。 输入耦合到绝缘体上硅（SOI）场效应晶体管（402）。 预放电器件耦合到所述多硅绝缘体上硅（SOI）场效应晶体管（402）。 预充电器件在多米诺骨电路的预充电模式下被激活，使得SOI寄生双极晶体管不被激活。 动态输入电路（300）将输入耦合到绝缘体上硅（SOI）场效应晶体管（402）。 在预充电模式期间，动态输入电路（300）的输出为低电平。 动态输入电路（300）的输出对应于评估模式期间的输入。 动态输入电路（300）的输出用于对预充电设备进行门控。