公开(公告)号：DE3277664D1

公开(公告)日：1987-12-17

申请号：DE3277664

申请日：1982-12-27

Applicant: IBM

Inventor： DE LA MONEDA FRANCISCO HOMERO ,  DOCKERTY ROBERT CHARLES

IPC: H01L21/28 ,  H01L21/316 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8246 ,  H01L27/088 ,  H01L27/112 ,  H01L29/78 ,  H01L21/82 ,  H01L21/76 ,  H01L27/08

Abstract: For forming field effect transistors, a multilayer structure (16, 20, 21, 22, 24, 26) of different materials including a conductive layer (20) is deposited over a substrate (10). Vertical sidewalls are obtained by etching the top layers (24, 26) and a sidewall layer (30) is formed by oxidizing the sidewalls. Removing further material leaves the very fine structure of sidewall layers, which is used as a mask to etch the lower layers (22, 21, 20) so as to leave portions of the conductive layer as very fine gate electrodes, plus interconnections. Some gate electrodes of larger dimension are obtained simultaneously by covering the area between two stripes of the sidewall layer before etching down to the conductive layer.