Abstract:
The invention refers to a dynamic logic gate comprising a nano-electro-mechanical- switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.
Abstract:
A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The MEMS has an anchor portion having a conductor therethrough, by which it is connected to a substrate. The chip is attached to the MEMS substrate in a direction normal to the substrate surface, so as to make a conductive path from the chip to the MEMS. The chip may be attached by bonding the conductor to C4 metal pads formed on the chip, or by bonding the conductor to metal studs on the chip. The MEMS substrate may be thinned before attachment to the chip, or may be removed from the underside of the MEMS. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
Abstract:
PROBLEM TO BE SOLVED: To provide a probe and a data storage device, requiring less power consumption. SOLUTION: The data storage device includes a storage medium for storing data in a form of marks, and at least one probe for scanning this storage medium, and the storage medium can be included in the substrate. The probe contains a cantilever including a terminal, where this terminal functions as an electrical contact to mechanically be fixed on a probe retention structure, which can be a common frame of the data storage device during probe operation. The probe also contains a support structure, to which it mechanically connects the terminal directly or via a hinge. This support structure extends so as to separate from the terminal. The end section having a nano-scaled vertex is provided. A beam structure, which contains a heat resistor, is installed at the end section of the support structure. This beam structure is thinner than the area of the support structure, directly contacting the beam structure in at least the direction parallel to the shaft of the end section. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).
Abstract:
A microsystem, comprising a first static element (1), a second, movable and unattached element (2), an actuator (3) for effecting a force between the first and the second element (1, 2), which actuator (3) is designed for controlling a temperature (T1, T2) of one of the first element (1) and the second element (2). A corresponding method for positioning a second element (2) with respect to a first element (1) in a microsystem is introduced.
Abstract:
A method for at least partially releasing microstructures from a substrate is provided. The method comprises the steps of: a) providing a substrate (2); b) depositing onto said substrate (2) a first layer (4) and a second layer (6), the first layer (4) and the second layer (6) each comprising an electrically conducting material and each having a different oxido-reduction potential; c) electrically connecting the first layer (4) and the second layer (6); d) forming a microstructure (8) on the first (4) and second (6) layers deposited in step b) to produce an intermediate structure (10); and e) electrochemically etching said second layer (6) by immersing the intermediate structure (10) formed in step d) in an electrolyte (12).
Abstract:
A microsystem switch (1, 20, 25, 30, 33) has a support (2) defining a recess (3), and a flexible bridge (6) is mounted on the support (2) bridging the recess (3). The bridge (6) is shaped so as to hold selectively a concave support stable state, in which the bridge bulges out of the recess (3). The switch includes an actuator (8, 9; 26, 27) for effecting flexing of the bridge (6) between the stable states, and a switching element (7, 31, 34) is mounted on the bridge (6) such that movement of the bridge between the stable states moves the switching element between an on position and an off position. According to another design, a microsystem switch (40, 55) has a support (41) defining a recess (42), and an elongate torsion member (44) is mounted on the support (41) bridging the recess (42). A flexible bridge (43, 56) is mounted on the support (41) bridging the recess (42) in a direction substantially perpendicular to the torsion member (44). The bridge (43, 56) is connected to the torsion member (44) at the cross-point thereof so that a first section of the bridge extends between the cross-point and one side of the recess (42) and a second section of the bridge extends between the cross-point and the opposite side of the recess (42). The bridge (43, 56) is shaped so as to hold selectively a first stable state, in which the first section of the bridge bulges into the recess and the second section of the bridge bulges out of the recess, and a second stable state in which this configuration is reversed. A switching element (45) is mounted at the cross-point of the bridge (43, 56) and torsion member (44), and an actuator (46a, 46b; 58a, 58b) is again provided for effecting flexing of the bridge (43, 56) between the stable states. Here, movement of the bridge (43, 56) between the stable states effects twisting of the torsion member (44) and rotation of the switching element (45) between an on position and an off position. Switching devices incorporating these switches, and switching apparatus comprising arrays of such switching devices, are also provided.
Abstract:
Integrierter elektromechanischer Aktuator (1), der Folgendes umfasst:- Aktuatorelektroden mit einem elektrostatischen Aktuatorspalt zwischen den Aktuatorelektroden,- Kontaktelektroden mit einem elektrischen Kontaktspalt zwischen den Kontaktelektroden,wobei eine Neigung mit einem Neigungswinkel (α) zwischen den Aktuatorelektroden und den Kontaktelektroden bereitgestellt wird,wobei eine Dicke des elektrischen Kontaktspalts (g0) gleich der Dicke einer Opferschicht ist, undwobei eine Dicke (g) des elektrostatischen Aktuatorspalts von der Dicke des elektrischen Kontaktspalts (g) und von dem Neigungswinkel (a) wie folgt abhängt:
Abstract:
Die vorliegende Erfindung stellt einen integrierten elektromechanischen Aktuator und ein Herstellungsverfahren zum Herstellen eines solchen integrierten elektromechanischen Aktuators bereit. Der integrierte elektromechanische Aktuator umfasst einen elektrostatischen Aktuatorspalt zwischen Aktuatorelektroden und einen elektrischen Kontaktspalt zwischen Kontaktelektroden. Zwischen den Aktuatorelektroden und den Kontaktelektroden wird eine Neigung mit einem Neigungswinkel bereitgestellt. Die Dicke dieses elektrischen Kontaktspalts ist gleich der Dicke einer Opferschicht, die in einem Herstellungsverfahren weggeätzt wird.