公开(公告)号：DE2257649A1

公开(公告)日：1973-06-07

申请号：DE2257649

申请日：1972-11-24

Applicant: IBM

Inventor： BHATTACHARYYA ARUP ,  DINKLAGE JOHN BULLARD

IPC: H01L21/66 ,  G01R31/26

Abstract: 1380287 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 6 Nov 1972 [30 Nov 1971] 51117/72 Heading H1K A method of stressing insulating layers, particularly gate oxides of IGFETS, on the surface of semi-conductor wafers to cause early failure of imperfect layers comprises subjecting the layers to a glow discharge and an electric field, preferably of between 1 and 4 Î 10 6 volts/ cm, for a tine, e.g. 30 mins., sufficient to break down imperfect layers. A magnetic field of between 40 and 70 gauss also may be advantageously applied in a direction perpendicular to the insulating surface during the glow discharge, and the wafer may also be heated to between 70 and 250‹ C. by means of a heated coil. The operation may take place in a bell jar containing a low pressure of argon or nitrogen, the wafer being placed below an energized cathode, on a grounded anode. The magnetic field may be applied by an electromagnet encircling the bell jar. The wafer may be of silicon, the layer being thermally grown silicon dioxide, or else of silicon nitride, gallium nitride or titanium dioxide.