公开(公告)号：DE1564141A1

公开(公告)日：1972-03-30

申请号：DE1564141

申请日：1966-04-26

Applicant: IBM

Inventor： LEON FLUR BARRY ,  DIRK DAVIDSE PIETER ,  ISRAEL MAISSEL LEON

IPC: G11C11/14 ,  C23C14/10 ,  C23C14/34 ,  G11B5/738 ,  H01F10/26 ,  H01F10/28 ,  H01F10/30 ,  H01F41/14

公开(公告)号：DE1933467A1

公开(公告)日：1970-03-05

申请号：DE1933467

申请日：1969-07-02

Applicant: IBM

Inventor： DIRK DAVIDSE PIETER ,  SKINNER LOGAN JOSEPH ,  STEARNS MADDOCKS FRED

IPC: C23C14/40 ,  C23C14/35 ,  H01J37/34 ,  H01L21/285 ,  C23C7/00

公开(公告)号：DE1765127A1

公开(公告)日：1972-04-06

申请号：DE1765127

申请日：1968-04-06

Applicant: IBM

Inventor： DIRK DAVIDSE PIETER

IPC: C23C14/35 ,  H01J37/34 ,  C23C15/00

Abstract: 1,149,370. Sputtering apparatus. INTERNATIONAL BUSINESS MACHINES CORP. April 3, 1968 (April 10, 1967], No.16013/68. Heading C7F. In a R. F, sputtering apparatus, the impedance matching circuit 19 is positioned in an earthed conductive housing 21 forming a common enclosure with the ionization chamber 11. The material which is sputtered may be a metal e.g. Al, Mo, Au, Pt, Cu, Ge or Si or in a modified apparatus, using a magnetic field, Fig.2 (not shown) the material may be a dielectric, e. g. silicon nitride, quartz, borosilicate glass, calcium-aluminosilicate glass, alumina, mullite or silicon dioxide. The ionization chamber may contain argon, neon, oxygen, nitrogen or hydrogen.

公开(公告)号：DE1515310A1

公开(公告)日：1969-08-14

申请号：DE1515310

申请日：1966-12-15

Applicant: IBM

Inventor： DIRK DAVIDSE PIETER ,  RAY KOSTER LAWRENCE

IPC: C23C14/00 ,  C23C14/34 ,  C23C14/35 ,  H01G4/08 ,  H01J37/34 ,  C23C15/00

Abstract: A dielectric material, e.g. mullite, fused quartz, calcium-alumino-or boro-silicate glass, refractory oxide such as alumina, is sputtered by radio frequency stimulated glow discharge in an ionization chamber 10-12, RF power being coupled through a capacitor 60 to an electrode 22 associated with source of dielectric material 21 e.g. via a conductor 27 passing through an earthed base plate 12 of the chamber and a hollow supporting post 24 having a shield 26 for the electrode. The sputtered material may be deposited on a substrate 30 e.g. of a semiconductor device mounted on a support plate 29 secured to a plate 31 which is earthed to the base plate 12 via support posts 32 and cooled by a cooling coil 35. Also during sputtering, the glow discharge, e.g. in A gas supplied through a conduit 13, may be subjected to a magnetic field provided by a stack a toroidal magnets 90.

公开(公告)号：DE1914747A1

公开(公告)日：1970-10-08

申请号：DE1914747

申请日：1969-03-22

Applicant: IBM

Inventor： DIRK DAVIDSE PIETER ,  LEWIS WHITAKER HOWARD

IPC: C23C14/35 ,  H01J37/34 ,  C23C15/00

公开(公告)号：DE1640529A1

公开(公告)日：1970-09-17

申请号：DE1640529

申请日：1967-05-26

Applicant: IBM

Inventor： DIRK DAVIDSE PIETER ,  ISRAEL MAISSEL LEON

IPC: C23C14/35 ,  H01J37/34 ,  H01L21/00 ,  H01L21/316 ,  H01L21/318 ,  H01L23/29 ,  C23C15/00

Abstract: 1,145,348. Coating with glass. INTERNATIONAL BUSINESS MACHINES CORP. 4 May, 1967 [31 May, 1966], No. 20682/67. Heading C1M. [Also in Divisions C7 and H1] A glass film is deposited on a semi-conductor surface, without damaging electrical components formed in the semi-conductor, by sputtering at a power density less than 4 watts per square inch across the anode and cathode which support a glow discharge in the sputtering chamber, then after an initial layer 200 Angstrom units thick has been deposited on the substrate the power density and rate of deposition are increased, as the substrate surface is by then shielded from the higher-energy particles which build up the remainder of the film. The sputtering chamber may be filled with Ar under reduced pressure, and the glow discharge may be concentrated by a magnetic field. Fused quartz, Si dioxide, or Si nitride may be applied instead of glass, and Ge, Si and Group III-V compounds may be employed as substrates. After application of a sputtered layer the surface of the coated semiconductor may be altered by annealing.