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    2.
    发明专利
    未知

    公开(公告)号：DE1640529A1

    公开(公告)日：1970-09-17

    申请号：DE1640529

    申请日：1967-05-26

    Applicant: IBM

    Inventor： DIRK DAVIDSE PIETER ,  ISRAEL MAISSEL LEON

    IPC: C23C14/35 ,  H01J37/34 ,  H01L21/00 ,  H01L21/316 ,  H01L21/318 ,  H01L23/29 ,  C23C15/00

    Abstract: 1,145,348. Coating with glass. INTERNATIONAL BUSINESS MACHINES CORP. 4 May, 1967 [31 May, 1966], No. 20682/67. Heading C1M. [Also in Divisions C7 and H1] A glass film is deposited on a semi-conductor surface, without damaging electrical components formed in the semi-conductor, by sputtering at a power density less than 4 watts per square inch across the anode and cathode which support a glow discharge in the sputtering chamber, then after an initial layer 200 Angstrom units thick has been deposited on the substrate the power density and rate of deposition are increased, as the substrate surface is by then shielded from the higher-energy particles which build up the remainder of the film. The sputtering chamber may be filled with Ar under reduced pressure, and the glow discharge may be concentrated by a magnetic field. Fused quartz, Si dioxide, or Si nitride may be applied instead of glass, and Ge, Si and Group III-V compounds may be employed as substrates. After application of a sputtered layer the surface of the coated semiconductor may be altered by annealing.

    6.
    发明专利
    未知

    公开(公告)号：DE1907637A1

    公开(公告)日：1971-01-21

    申请号：DE1907637

    申请日：1969-02-15

    Applicant: IBM

    Inventor： ISRAEL MAISSEL LEON ,  BERNT NARKEN ,  SUNNERS BRIAN

    IPC: C23C14/35 ,  G03G5/153 ,  G11B5/72 ,  H01F41/18 ,  H01J37/34

    Abstract: A transparent, protective coating overlies a photoconductive layer and is integral therewith. The coating, which has a resistivity at least equal to the dark resistivity of the photoconductive material, has a thickness in the range of 50A-4000A. The coating is deposited on the photoconductive layer by sputtering through utilization of a high frequency alternating voltage whereby the properties of the coating may be controlled. When applying the high frequency alternating voltage, the power is kept low to produce a relatively high compressive stress of the coating. Controlling the power results in controlling the compressive stress of the coating. The temperature of the photoconductive layer may be maintained at a sufficiently low temperature so that the photoconductive layer retains its photoconductive properties.

    7.
    发明专利
    未知

    公开(公告)号：DE1912917A1

    公开(公告)日：1969-10-16

    申请号：DE1912917

    申请日：1969-03-14

    Applicant: IBM

    Inventor： ISRAEL MAISSEL LEON ,  NARKEN BERNT ,  SUNNERS BRIAN

    IPC: C23C14/35 ,  G03G5/153 ,  G11B5/72 ,  H01F41/18 ,  H01J37/34

    Abstract: A transparent, protective coating overlies a photoconductive layer and is integral therewith. The coating, which has a resistivity at least equal to the dark resistivity of the photoconductive material, has a thickness in the range of 50A-4000A. The coating is deposited on the photoconductive layer by sputtering through utilization of a high frequency alternating voltage whereby the properties of the coating may be controlled. When applying the high frequency alternating voltage, the power is kept low to produce a relatively high compressive stress of the coating. Controlling the power results in controlling the compressive stress of the coating. The temperature of the photoconductive layer may be maintained at a sufficiently low temperature so that the photoconductive layer retains its photoconductive properties.

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