公开(公告)号：DE2422138A1

公开(公告)日：1975-01-23

申请号：DE2422138

申请日：1974-05-08

Applicant: IBM

Inventor： CHAPPELOW RONALD EDWARD ,  DONEY DONALD ALDEN ,  DOULIN JOSEPH ,  LIN PAUL TACHANG

IPC: H01L29/78 ,  H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/00 ,  H01L21/72

Abstract: A method for forming contoured electrodes of polycrystalline silicon by grading the concentration of dopant diffused into the silicon layers during the deposition process. Upon etching the silicon after deposition to form electrodes, e.g., the gate electrode of a field effect transistor, the electrode is desirably tapered. Conductive and insulator layers subsequently deposited atop the tapered electrode are less subject to cracking and lifting off than standard electrodes.