公开(公告)号：US3560810A

公开(公告)日：1971-02-02

申请号：US3560810D

申请日：1968-08-15

Applicant: IBM

Inventor： BALK PIETER ,  DONG DAVID W ,  ELDRIGE JEROME M

IPC: H01L29/78 ,  H01L21/316 ,  H01L29/00 ,  H01L29/51 ,  H01L11/14

CPC classification number: H01L29/511 ,  H01L21/316 ,  H01L29/00

Abstract: An insulated-gate field effect transistor is described which includes a gate insulator defined as a laminate structure comprising a phosphosilicate glass (PSG) layer and a silicon dioxide (SiO2) layer, the ratio of the thicknesses of such layers and, also, the P2O5 concentration in the PSG layer being properly chosen to insure stable device characteristics over extended periods under operation conditions.

公开(公告)号：CA868640A

公开(公告)日：1971-04-13

申请号：CA868640D

Applicant: IBM

Inventor： BALK PIETER ,  DONG DAVID W ,  ELDRIDGE JEROME M