公开(公告)号：JP2002060944A

公开(公告)日：2002-02-28

申请号：JP2001122174

申请日：2001-04-20

Applicant: IBM

Inventor： DOUGLAS BUSHANAN ,  DEBORAH ANNE NEWMEYER

IPC: C23C16/30 ,  C23C16/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L21/208 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/288 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/334 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/08 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a precursory raw material mixture useful for CVD and ALD, to provide a method for growing a film by using the same and to provide a method for forming an electronic device having the same film incorporated therein. SOLUTION: At least one precursory compound containing a metallic element such as Li contains at least one precursory material inclusive of a compound such as a hydride, and the same is dissolved, emulsified or floated into an inert solution of aliphatic hydrocarbon or the like. The precursory raw material mixture is a solution, an emulsion or a suspension and is composed of a mixture of a solid phase, a liquid phase and a vapor phase, and they are dispersed over the whole mixture.