公开(公告)号：JP2000200877A

公开(公告)日：2000-07-18

申请号：JP36451099

申请日：1999-12-22

Applicant: IBM

Inventor： PETER RICHARD DANKUUMU ,  EDELSTEIN DANIEL CHARLES ,  LAIBOWITZ ROBERT BENJAMIN ,  DEBORAH ANNE NEWMEYER ,  NING TAK H ,  ROSENBERG ROBERT ,  THOMAS MAKAROORU SHOW

IPC: H01G4/33 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L23/522 ,  H01L23/532 ,  H01L23/64 ,  H01L27/04 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To ensure effective filtering action while reducing noise by employing an amorphous thin film material as a dielectric material having permittivity of a specified value or above being arranged between two electrodes. SOLUTION: A decoupling capacitor 10 is formed as a laminate where an amorphous dielectric thin film 12 is sandwiched between two electrodes 14, 16 of conductive layer containing TaN, Pt, Ir, ruthenium oxide, Al, Au, Cu, Ta, TaSiN and mixtures or a multiplayer thereof. The amorphous dielectric thin film 12 is composed of a perovskite-type oxide containing a titanate based dielectric, a manganate based material, a cuprite based material, a tungsten bronze type niobate, and tantalite wherein the perovskite-type oxide has permittivity higher than 10. Thus, effective filtering action can be ensured while reducing noise.

公开(公告)号：JP2007194639A

公开(公告)日：2007-08-02

申请号：JP2007010824

申请日：2007-01-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DEBORAH ANNE NEWMEYER ,  STEPHEN MCCONELL GATES ,  VISHNUBHAI V PATEL ,  GRILL ALFRED ,  NGUYEN SON VAN ,  ALI AFZALI-ARDAKANI

IPC: H01L21/316

CPC classification number: H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide SiCOH dielectrics and its manufacturing method. SOLUTION: There is provided a useful porous composite material in semiconductor device manufacturing in which the diameter (or the feature size) of a pore and pore size distribution (PSD) are controlled using a nanoscale and which shows an improved cohesive force (or which is the same with improved fracture toughness or improved brittleness) and increase in the power of resistance to the deterioration of the property of wafer such as stress corrosion cracking, Cu invasion, and other important property. The porous composite material is manufactured using at least one bifunctional organic pore source as a precursor compound. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供SiCOH电介质及其制造方法。 解决方案：在半导体器件制造中提供了有用的多孔复合材料，其中使用纳米尺度控制孔和孔径分布（PSD）的直径（或特征尺寸）并且其显示出改善的内聚力（ 或与改善的断裂韧性或脆性提高相同），耐腐蚀性能的提高，例如应力腐蚀开裂，Cu侵蚀等重要的特性。 使用至少一种双功能有机孔源作为前体化合物制造多孔复合材料。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2002060944A

公开(公告)日：2002-02-28

申请号：JP2001122174

申请日：2001-04-20

Applicant: IBM

Inventor： DOUGLAS BUSHANAN ,  DEBORAH ANNE NEWMEYER

IPC: C23C16/30 ,  C23C16/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/203 ,  H01L21/205 ,  H01L21/208 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/288 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/334 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/08 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a precursory raw material mixture useful for CVD and ALD, to provide a method for growing a film by using the same and to provide a method for forming an electronic device having the same film incorporated therein. SOLUTION: At least one precursory compound containing a metallic element such as Li contains at least one precursory material inclusive of a compound such as a hydride, and the same is dissolved, emulsified or floated into an inert solution of aliphatic hydrocarbon or the like. The precursory raw material mixture is a solution, an emulsion or a suspension and is composed of a mixture of a solid phase, a liquid phase and a vapor phase, and they are dispersed over the whole mixture.