公开(公告)号：CA1123121A

公开(公告)日：1982-05-04

申请号：CA337524

申请日：1979-10-12

Applicant: IBM

Inventor： DREVES RICHARD F ,  FRESIA JOHN F ,  KIM SANG U ,  LAJZA JOHN J JR

IPC: H01L21/033 ,  H01L21/22 ,  H01L21/28 ,  H01L21/331 ,  H01L21/338 ,  H01L29/47 ,  H01L29/73 ,  H01L29/872

Abstract: Self Aligned Schottky Guard Ring A method of forming a self aligned guard ring surrounding a schottky barrier diode device without requiring an enlargement of the final schottky barrier device. The method involves creating an overhanging opening in a insulator layer overlying a semiconductor body to expose the schottky contact area on the surface of the semiconductor body, depositing a diffusion barrier material such as molybdenum in the opening, the deposit being of the same size as the smallest part of the overhanging opening so that a guard ring can be formed from a vapor by diffusion around the deposited barrier material.