公开(公告)号：JP2003303898A

公开(公告)日：2003-10-24

申请号：JP2003078141

申请日：2003-03-20

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： BERTIN CLAUDE L ,  JOHN JOSEF ELLIS-MONAHAN ,  ERIK RAY HEDBERG ,  HOOK TERENCE B ,  MANDELMAN JACK ALLAN ,  EDWARD JOSEF NOWACK ,  PRICER WILBUR DAVID ,  MIN HO TON ,  TONTI WILLIAM R

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H03K17/06 ,  H03K19/00 ,  H03K19/094 ,  H03K19/0944

CPC classification number: H03K19/0027 ,  H01L29/78606 ,  H03K2217/0018

Abstract: PROBLEM TO BE SOLVED: To provide a switched body SOI CMOS circuit which is provided with an FET element for increasing a FET element threshold voltage.
SOLUTION: A circuit having an SOI element is connected with a body bias voltage, via a switch for selectively connecting a body bias voltage signal with an SOI element body. An NMOS or PMOS SOI element is used as the switched body SOI element. An FET is used as a switch. A gate terminal of the SOI element is connected with an FET element. A gate of the SOI element controls the FET switch connection of the body bias voltage signal to the SOI element, and adjusts a threshold value voltage of the SOI element. A logic circuit including the SOI element and a fabrication process for the SOI element are similarly disclosed.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种开关体SOI CMOS电路，其提供有用于增加FET元件阈值电压的FET元件。 解决方案：具有SOI元件的电路通过用于选择性地将体偏置电压信号与SOI元件体连接的开关与体偏置电压连接。 NMOS或PMOS SOI元件用作开关体SOI元件。 使用FET作为开关。 SOI元件的栅极端子与FET元件连接。 SOI元件的栅极控制体偏置电压信号与SOI元件的FET开关连接，并调整SOI元件的阈值电压。 类似地公开了包括SOI元件的逻辑电路和用于SOI元件的制造工艺。 版权所有（C）2004，JPO

公开(公告)号：JP2000332132A

公开(公告)日：2000-11-30

申请号：JP2000116911

申请日：2000-04-18

Applicant: IBM

Inventor： BERTIN CLAUDE L ,  JOHN JOSEF ELLIS-MONAHAN ,  ERIK RAY HEDBERG ,  HOOK TERENCE B ,  MANDELMAN JACK ALLAN ,  EDWARD JOSEF NOWACK ,  PRICER WILBUR DAVID ,  MIN HO TON ,  TONTI WILLIAM R

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H03K17/06 ,  H03K19/00 ,  H03K19/094 ,  H03K19/0944

Abstract: PROBLEM TO BE SOLVED: To increase the threshold voltage of an FET element after switched from a floating state to a biased state by changing a bulk CMOS element to an element within a silicon substrate on an insulator. SOLUTION: A unit cell 1 includes an SOINMOS transistor 60, and its main body or an isolated SOI substrate region 62 is connected to main-body-device transistor switches 64 and 66. The switch 64 is connected to a reference signal 74. When operated by a control signal 80 applied to a gate 78, the switch 64 supplies the signal 74 to the main body 62 of the transistor 60. The main body 62 is connected to a reference signal 76 via a switch 66, and the switch 66 is operated by a control signal 84 supplied to a gate 80. In an active switching state, the threshold voltage level is low, and in a standby state, it is high.