公开(公告)号：US3626384A

公开(公告)日：1971-12-07

申请号：US3626384D

申请日：1969-12-23

Applicant: IBM

Inventor： DAVIS JONATHAN B ,  EDWARDS NATHEN P ,  HERD HAROLD H

IPC: G01R17/00 ,  G06F17/40 ,  G01D21/00 ,  G06F7/00

CPC classification number: G01R17/00

Abstract: A method is provided for reducing measured data to representative coefficient values. The data relates to physical energy collected and measured by a physical sensor, and therefore, the measured data includes noise. In the method which may be carried out by programming a general purpose digital computer, the measured data values are first processed to remove the linear trend. The resultant values are then processed to provide the maximum number of coefficient values which represent the measured data values. A certain number of the set of coefficient values represent the portion of the measurements which is substantially noise, and may be eliminated. The method therefore includes a process for determining a number of coefficients of the total set which represent the measured data with minimum error where minimum error is defined as minimum stochastic uncertainty.

公开(公告)号：CA1285663C

公开(公告)日：1991-07-02

申请号：CA532512

申请日：1987-03-19

Applicant: IBM

Inventor： EDWARDS NATHEN P

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/74 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/417 ,  H01L29/43 ,  H01L29/45 ,  H01L29/78 ,  H01L27/04

Abstract: YO9-85-067 BURIED CONTACT STRUCTURE FOR REDUCING RESISTANCE IN INTEGRATED CIRCUITS A buried contact structure to decrease the spreading resistance of various circuit elements of semiconductor devices such as transistors and for reducing the resistance of polysilicon wires typically used in short lengths to connect the circuit elements to other metallic wires. The buried contact structure more specifically includes a phosphorous diffusion superimposed on the field implant which includes the source and/or drain of the transistor device. An overlayed layer of polysilicon is then disposed to make contact with the buried contact diffusion. The field implant used for the source and drain may, for example, be boron. The buried contact structure has a lower resistance than the field implant and therefore provides a lower resistance path for the device current.