公开(公告)号：US3816173A

公开(公告)日：1974-06-11

申请号：US31030772

申请日：1972-11-29

Applicant: IBM

Inventor： ELDRIDGE J ,  MATISOO J

IPC: H01L39/22 ,  H01L39/24 ,  H01L3/00

CPC classification number: H01L39/2493 ,  H01L39/223 ,  Y10S505/818

Abstract: Alloying the base electrode of a lead-oxide-lead Josephson tunnel junction with indium will effectively result in an oxide having a low barrier height. Consequently, much thicker barriers can be produced without severely limiting the magnitude of the tunnel current. Furthermore, by varying the indium concentration in an array of Pb-In electrodes on a single chip, one can produce various different functioning devices while employing only a single oxidation process.

Abstract translation: 用铟氧化物引线约瑟夫逊隧道结的基极合金将有效地导致具有低势垒高度的氧化物。 因此，可以产生更厚的阻挡层，而不会严格限制隧道电流的大小。 此外，通过在单个芯片上改变Pb-In电极阵列中的铟浓度，可以仅使用单个氧化工艺来产生各种不同功能的器件。