公开(公告)号：DE2150978A1

公开(公告)日：1972-05-04

申请号：DE2150978

申请日：1971-10-13

Applicant: IBM

Inventor： ELVIN DRANGEID KARSTEN ,  VETTIGER PETER

IPC: H01L29/00 ,  H03K17/687 ,  H01L13/00

公开(公告)号：DE1764164B1

公开(公告)日：1972-02-03

申请号：DE1764164

申请日：1968-04-13

Applicant: IBM DEUTSCHLAND

Inventor： FRANZ STATZ HORST ,  ELVIN DRANGEID KARSTEN ,  OSKAR MOHR THEODOR ,  VON MUENCH WALDEMAR

IPC: H01L29/00 ,  H01L29/812 ,  H01L11/14

Abstract: 1,180,186. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 4 April, 1968 [18 April, 1967], No. 16235/68. Heading H1K. Two heavily doped highly conductive areas 46, 47 are provided on a substrate 41 beneath the weakly doped channel layer 42 between the source 43 and the gate 44, and the gate 44 and the drain 45, of a Schottky-barrier field-effect transistor to improve its transconductance. The transistor may be made of germanium, silicon or gallium arsenide and the substrate may also be of sapphire, the channel layer being epitaxially grown over the highly conducting areas and the substrate. A similar device, Fig. 5, not shown, can be made by planar techniques. In such cases the highly conductive areas may be in the form of composite layers, Fig. 7, not shown, the lower sub-layers being of successively higher conductivity than the sub-layers above them. In other embodiments the highly conductive areas are grown on top of the channel layer, Fig. 3, not shown, or actually form part of it, Fig. 2, not shown.