公开(公告)号：JPH1170465A

公开(公告)日：1999-03-16

申请号：JP18175998

申请日：1998-06-29

Applicant: IBM

Inventor： TIMOTHY S CHAMBERLAIN ,  MATTHEW K MILLER ,  ERIC G WALTON

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To sufficiently hold the polishing speed and wafer uniformity by feeding chemical slurry to a spray means, by letting the slurry to pass through an opening, and by providing a presser means for forming the spray to be provided on the surface of the polishing pad. SOLUTION: Slurry is fed to the surface of a polishing pad 13 by a spray means 32 during polishing, injected or pressed in open holes in the polishing pad 13, and forms a slurry layer on a pad surface. The spray means 32 is provided with an entrance 33 for feeding the slurry. The slurry is pressed out from nozzles 35 as a form of the spray or the splash 34 under the pressure from the spray means 32. The spray pressure applied on the chemical slurry spray and the pad 13 allows the spray to cover the front face of the pad 13 and also to be pressed into the holes in the pad 13.

公开(公告)号：JP2005210121A

公开(公告)日：2005-08-04

申请号：JP2005010872

申请日：2005-01-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： JEFFREY P GANBINO ,  MOTSIFF WILLIAM T ,  ERIC G WALTON

IPC: H01F41/04 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/822 ,  H01L23/31 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04

CPC classification number: H01L28/10 ,  H01F41/041 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/3192 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/02 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/4902 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To integrate high performance copper inductors with global interconnects, and with either Al bond pads or Cu bond pads. SOLUTION: The integration of high performance copper inductors are conducted wherein a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal + 1 level, with the metal levels interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal + 1 level. The invention provides methods for integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal + 1 wiring. The subject invention uses the dielectric deposition, spacer formation, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：将高性能铜电感器与全局互连以及Al接合焊盘或Cu接合焊盘集成在一起。

解决方案：实现了高性能铜电感器的集成，其中在最后的金属级别形成高的Cu层压螺旋电感器，并且在最后的金属+ 1级别处，金属水平通过棒互连， 与螺旋金属电感器相同的螺旋形状在最后的金属水平和最后的金属+ 1水平。 本发明提供了将厚电感器的形成与最后的金属+ 1布线形成接合焊盘，端子和互连布线的方法。 本发明使用诸如CoWP的钝化金属的电介质沉积，间隔物形成和/或选择性沉积来钝化在最后一个金属层之后形成的Cu电感器。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH1133903A

公开(公告)日：1999-02-09

申请号：JP16029698

申请日：1998-06-09

Applicant: IBM

Inventor： MATTHEW KIRKPATRICK MILLER ,  CLIFFORD OWEN MORGAN ,  MATTHEW JEREMY RUTT ,  ERIC G WALTON ,  TERENCE MONTE WRIGHT

IPC: B24B37/24 ,  B24D3/34 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To supply a special fluid phase chemical to a surface of a board by controllably discharging the capsuled material freely between a chemical and a mechanical polishing processes through the operation of process parameter such as an applying force. SOLUTION: Plural types of capsuled chemical are assembled in a polishing medium such as a polishing pad 63. As plural micro capsuled chemical, a reactive agent micro capsule A, a surface active micro capsule B, a buffer micro capsule C is used. These micro capsules A, B, C are broken at the time of use of them in a polishing process, and an appropriate quantity of a desirable chemical is directly supplied to a surface of a board to be polished or a wafer. Discharge of the content of the micro capsules A, B, C is controlled by the operation of a polishing parameter. The polishing parameter includes an appropriate value of downward force, friction coefficient, platen rotating speed, and wafer and carrier rotating speed for a specified chemical and mechanical polishing process.